2SA957 Datasheet. Equivalente

 ..1. Size:40K  no
 2sa957.pdf

 ..2. Size:152K  jmnic
 2sa957 2sa958.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA957 2SA958 DESCRIPTION With TO-220 package High breakdown voltage High power dissipation APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SY

 ..3. Size:199K  inchange semiconductor
 2sa957.pdf

isc Silicon PNP Power Transistor 2SA957 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -150 V CB

 ..4. Size:126K  inchange semiconductor
 2sa957 2sa958.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA957 2SA958 DESCRIPTION With TO-220 package High breakdown voltage High power dissipation APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratin

 9.1. Size:192K  toshiba
 2sa950.pdf

2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA950 Audio Power Amplifier Applications Unit mm High hFE h = 100 320 FE 1 W output applications Complementary to 2SC2120 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -35 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO

 9.2. Size:159K  nec
 2sa953.pdf

 9.3. Size:180K  nec
 2sa952.pdf

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 2sa954.pdf

 9.5. Size:256K  mcc
 2sa950-o-y.pdf

MCC TM Micro Commercial Components 2SA950-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA950-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Complementary Pair With 2SC2120 Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Transistors RoHS Compliant.

 9.6. Size:338K  secos
 2sa950.pdf

2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES 1W output applications G H Complementary to 2SC2120 Emitter Collector Base J CLASSIFICATION OF hFE (1) A D Millimeter REF. Min. Max. Product-Rank 2SA950-O 2SA950-Y A 4.40 4.70

 9.7. Size:500K  jiangsu
 2sa950.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA950 TRANSISTOR (PNP) TO-92 FEATURES 1W Output Applications 1.EMITTER Complementary to 2SC2120 2. COLLECTOR 3. BASE Equivalent Circuit A950=Device code Solid dot=Green molding compound device, if none,the normal device XXX=Code

 9.8. Size:149K  jmnic
 2sa959.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA959 DESCRIPTION With TO-3 package Excellent safe operating area APPLICATIONS For high power audio ,stepping motor and other linear applications Relay or solenoid drviers DC-DC converters inverters PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Coll

 9.9. Size:188K  lge
 2sa950.pdf

2SA950(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features 1W output applications complementary to 2SC2120 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collecto

 9.10. Size:809K  blue-rocket-elect
 2sa953m.pdf

2SA953M(BR3CG953M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,h ,V FE CEO High total power dissipation, high hFE and high VCEO. / Applications Audio frequency amplifier and d

 9.11. Size:193K  inchange semiconductor
 2sa959.pdf

isc Silicon PNP Power Transistor 2SA959 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min.) (BR)CEO High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -100 V C

 9.12. Size:199K  inchange semiconductor
 2sa958.pdf

isc Silicon PNP Power Transistor 2SA958 DESCRIPTION Collector-Emitter Breakdown Voltage V = -200V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -200 V CBO V Collector-Emitter Volt