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2SA958 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SA958
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 200 V
   Tensión colector-emisor (Vce): 200 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 20 MHz
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

2SA958 Datasheet (PDF)

 ..1. Size:152K  jmnic
2sa957 2sa958.pdf pdf_icon

2SA958

JMnic Product Specification Silicon PNP Power Transistors 2SA957 2SA958 DESCRIPTION With TO-220 package High breakdown voltage High power dissipation APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SY

 ..2. Size:126K  inchange semiconductor
2sa957 2sa958.pdf pdf_icon

2SA958

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA957 2SA958 DESCRIPTION With TO-220 package High breakdown voltage High power dissipation APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratin

 ..3. Size:199K  inchange semiconductor
2sa958.pdf pdf_icon

2SA958

isc Silicon PNP Power Transistor 2SA958DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -200V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -200 VCBOV Collector-Emitter Volt

 9.1. Size:192K  toshiba
2sa950.pdf pdf_icon

2SA958

2SA950 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA950 Audio Power Amplifier Applications Unit: mm High hFE: h = 100~320 FE 1 W output applications Complementary to 2SC2120 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -35 VCollector-emitter voltage VCEO -30 VEmitter-base voltage VEBO

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N314 | 2N1196 | 2N4355 | BUL57PI | 2SC2959 | 2N2600 | 2SA1480E

 

 
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