2SB1018Y Todos los transistores

 

2SB1018Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB1018Y
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 30 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 5 MHz
   Capacitancia de salida (Cc): 250 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: TO220
 

 Búsqueda de reemplazo de 2SB1018Y

   - Selección ⓘ de transistores por parámetros

 

2SB1018Y Datasheet (PDF)

 7.1. Size:199K  toshiba
 2sb1018.pdf pdf_icon

2SB1018Y

 7.2. Size:233K  toshiba
 2sb1018a.pdf pdf_icon

2SB1018Y

 7.3. Size:208K  jmnic
 2sb1018.pdf pdf_icon

2SB1018Y

JMnic Product Specification Silicon PNP Power Transistors 2SB1018 DESCRIPTION With TO-220F package High collector current Low collector saturation voltage Complement to type 2SD1411 APPLICATIONS Power amplifier applications High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 Base

 7.4. Size:213K  inchange semiconductor
 2sb1018.pdf pdf_icon

2SB1018Y

isc Silicon PNP Power Transistor 2SB1018DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max)@I = -4ACE(sat) CHigh Current Capability- I = -7ACComplement to Type 2SD1411Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.ABSOLUTE MAXIMUM RATINGS(

MOSTRAR MÁS

Otros transistores... 2SB1016R , 2SB1016Y , 2SB1017 , 2SB1017O , 2SB1017R , 2SB1017Y , 2SB1018 , 2SB1018O , 13009 , 2SB1019 , 2SB1019O , 2SB1019Y , 2SB102 , 2SB1020 , 2SB1021 , 2SB1022 , 2SB1023 .

History: BD303 | MP2359 | DMC205C0

 

 
Back to Top

 


 
.