All Transistors. 2SB1018Y Datasheet

 

2SB1018Y Datasheet and Replacement


   Type Designator: 2SB1018Y
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 7 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 5 MHz
   Collector Capacitance (Cc): 250 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO220
 

 2SB1018Y Substitution

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2SB1018Y Datasheet (PDF)

 7.1. Size:199K  toshiba
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2SB1018Y

 7.2. Size:233K  toshiba
 2sb1018a.pdf pdf_icon

2SB1018Y

 7.3. Size:208K  jmnic
 2sb1018.pdf pdf_icon

2SB1018Y

JMnic Product Specification Silicon PNP Power Transistors 2SB1018 DESCRIPTION With TO-220F package High collector current Low collector saturation voltage Complement to type 2SD1411 APPLICATIONS Power amplifier applications High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 Base

 7.4. Size:213K  inchange semiconductor
 2sb1018.pdf pdf_icon

2SB1018Y

isc Silicon PNP Power Transistor 2SB1018DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max)@I = -4ACE(sat) CHigh Current Capability- I = -7ACComplement to Type 2SD1411Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.ABSOLUTE MAXIMUM RATINGS(

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Datasheet: 2SB1016R , 2SB1016Y , 2SB1017 , 2SB1017O , 2SB1017R , 2SB1017Y , 2SB1018 , 2SB1018O , 13009 , 2SB1019 , 2SB1019O , 2SB1019Y , 2SB102 , 2SB1020 , 2SB1021 , 2SB1022 , 2SB1023 .

Keywords - 2SB1018Y transistor datasheet

 2SB1018Y cross reference
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