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2SB1018Y Specs and Replacement

Type Designator: 2SB1018Y

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 250 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO220

 2SB1018Y Substitution

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2SB1018Y datasheet

 7.1. Size:199K  toshiba

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2SB1018Y

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 7.2. Size:233K  toshiba

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2SB1018Y

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 7.3. Size:208K  jmnic

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2SB1018Y

JMnic Product Specification Silicon PNP Power Transistors 2SB1018 DESCRIPTION With TO-220F package High collector current Low collector saturation voltage Complement to type 2SD1411 APPLICATIONS Power amplifier applications High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Base... See More ⇒

 7.4. Size:213K  inchange semiconductor

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2SB1018Y

isc Silicon PNP Power Transistor 2SB1018 DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Max)@I = -4A CE(sat) C High Current Capability- I = -7A C Complement to Type 2SD1411 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current switching applications. Power amplifier applications. ABSOLUTE MAXIMUM RATINGS(... See More ⇒

Detailed specifications: 2SB1016R, 2SB1016Y, 2SB1017, 2SB1017O, 2SB1017R, 2SB1017Y, 2SB1018, 2SB1018O, TIP3055, 2SB1019, 2SB1019O, 2SB1019Y, 2SB102, 2SB1020, 2SB1021, 2SB1022, 2SB1023

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