2SB1121T Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1121T
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 150 MHz
Capacitancia de salida (Cc): 32 pF
Ganancia de corriente contínua (hFE): 200
Encapsulados: SOT89
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2SB1121T datasheet
2sb1121.pdf
Ordering number EN1787B 2SB1121 / 2SD1621 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1121 / 2SD1621 High-Current Driver Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity
2sb1121.pdf
Ordering number EN1787C 2SB1121 Bipolar Transistor http //onsemi.com -25V, -2A, Low VCE(sat) PNP Single PCP Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Low collector to emitter saturation voltage Large current capacity and wide SOA Fast switching speed Ultrasmall size ma
2sb1121.pdf
SMD Type Transistors PNP Transistors 2SB1121 1.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. 0.42 0.1 0.46 0.1 Complementary to 2SD1621 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector -
Otros transistores... 2SB112 , 2SB1120 , 2SB1120E , 2SB1120F , 2SB1120G , 2SB1121 , 2SB1121R , 2SB1121S , 2N4401 , 2SB1121U , 2SB1122 , 2SB1122R , 2SB1122S , 2SB1122T , 2SB1122U , 2SB1123 , 2SB1123R .
History: STD13003Q | BD109D | 2SA1210R | ZTX3866
History: STD13003Q | BD109D | 2SA1210R | ZTX3866
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