2SB1121T Specs and Replacement
Type Designator: 2SB1121T
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 32 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT89
2SB1121T Substitution
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2SB1121T datasheet
Ordering number EN1787B 2SB1121 / 2SD1621 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1121 / 2SD1621 High-Current Driver Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity ... See More ⇒
Ordering number EN1787C 2SB1121 Bipolar Transistor http //onsemi.com -25V, -2A, Low VCE(sat) PNP Single PCP Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Low collector to emitter saturation voltage Large current capacity and wide SOA Fast switching speed Ultrasmall size ma... See More ⇒
SMD Type Transistors PNP Transistors 2SB1121 1.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. 0.42 0.1 0.46 0.1 Complementary to 2SD1621 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - ... See More ⇒
Detailed specifications: 2SB112, 2SB1120, 2SB1120E, 2SB1120F, 2SB1120G, 2SB1121, 2SB1121R, 2SB1121S, 2N4401, 2SB1121U, 2SB1122, 2SB1122R, 2SB1122S, 2SB1122T, 2SB1122U, 2SB1123, 2SB1123R
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