2SB1121U . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1121U
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 32 pF
Ganancia de corriente contínua (hfe): 280
Paquete / Cubierta: SOT89
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2SB1121U Datasheet (PDF)
2sb1121.pdf
Ordering number : EN1787B2SB1121 / 2SD1621SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SB1121 / 2SD1621High-Current Driver ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity
2sb1121.pdf
Ordering number : EN1787C 2SB1121 Bipolar Transistor http://onsemi.com -25V, -2A, Low VCE(sat) PNP Single PCPApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Low collector to emitter saturation voltage Large current capacity and wide SOA Fast switching speed Ultrasmall size ma
2sb1121.pdf
SMD Type TransistorsPNP Transistors2SB11211.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed.0.42 0.10.46 0.1 Complementary to 2SD16211.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector -
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
