2SB1122T Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1122T
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 150 MHz
Capacitancia de salida (Cc): 12 pF
Ganancia de corriente contínua (hFE): 200
Encapsulados: SOT89
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2SB1122T datasheet
2sb1122.pdf
Ordering number EN2040B 2SB1122 / 2SD1622 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1122 / 2SD1622 Low-Frequency Power Amplifier Applications Applications Voltage regulators relay drivers, lamp drivers, electrical equipment. Features Adoption of FBET process. Ultrasmall size making it easy to provide high-density hybrid IC s. S
2sb1122.pdf
Ordering number EN2040C 2SB1122 Bipolar Transistor http //onsemi.com ( ) 50V, 1A, Low VCE sat PNP Single PCP Applicaitons Voltage regulators relay drivers, lamp drivers, electrical equipment Features Adoption of FBET process Ultrasmall size making it easy to provide high-density hybrid IC s Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol
2sb1122.pdf
SMD Type IC PNP Transistors 2SB1122 Features 1.70 0.1 Very small size making it easy to provide high highdensity, small-sized hybrid IC s. Complementary to 2SD1622 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter
Otros transistores... 2SB1121 , 2SB1121R , 2SB1121S , 2SB1121T , 2SB1121U , 2SB1122 , 2SB1122R , 2SB1122S , 2SD669A , 2SB1122U , 2SB1123 , 2SB1123R , 2SB1123S , 2SB1123T , 2SB1123U , 2SB1124 , 2SB1124R .
History: 2N678B | 2N68 | 2SC3488G | OC23 | 2SB173 | ESM5008
History: 2N678B | 2N68 | 2SC3488G | OC23 | 2SB173 | ESM5008
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