2SB1122T Specs and Replacement
Type Designator: 2SB1122T
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT89
2SB1122T Substitution
- BJT ⓘ Cross-Reference Search
2SB1122T datasheet
Ordering number EN2040B 2SB1122 / 2SD1622 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1122 / 2SD1622 Low-Frequency Power Amplifier Applications Applications Voltage regulators relay drivers, lamp drivers, electrical equipment. Features Adoption of FBET process. Ultrasmall size making it easy to provide high-density hybrid IC s. S... See More ⇒
Ordering number EN2040C 2SB1122 Bipolar Transistor http //onsemi.com ( ) 50V, 1A, Low VCE sat PNP Single PCP Applicaitons Voltage regulators relay drivers, lamp drivers, electrical equipment Features Adoption of FBET process Ultrasmall size making it easy to provide high-density hybrid IC s Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol... See More ⇒
SMD Type IC PNP Transistors 2SB1122 Features 1.70 0.1 Very small size making it easy to provide high highdensity, small-sized hybrid IC s. Complementary to 2SD1622 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter... See More ⇒
Detailed specifications: 2SB1121, 2SB1121R, 2SB1121S, 2SB1121T, 2SB1121U, 2SB1122, 2SB1122R, 2SB1122S, 2SD669A, 2SB1122U, 2SB1123, 2SB1123R, 2SB1123S, 2SB1123T, 2SB1123U, 2SB1124, 2SB1124R
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