2SB1123T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SB1123PNP-Silicon General use Transistors1W 1.5A25V 4 2 1 3ApplicationsCan be used for switching and amplifying in various SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating UnitV VCEO 25Collector-emitter voltage (IB=0) VCBO 40 VCollector-base voltageIE=0 VEBO 6 VEmitter-base voltageIC=0 IC 1.5 ACollect

Ordering number : EN1727E2SB1123 / 2SD1623SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SB1123 / 2SD1623High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capaci

Ordering number : EN1727F2SB1123/2SD1623Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 2A, Low VCE sat , PNP NPN Single PCPApplicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage Large current capacity and wide ASO Fast switching sp

SMD Type TransistorsPNP Transistors2SB11231.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed.0.42 0.10.46 0.1 Complementary to 2SD16231.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector -