2SB1189Q Todos los transistores

2SB1189 / 2SB1238 / 2SB899F Transistors Transistors 2SD1767 / 2SD1859 / 2SD1200F (96-618-B13) (96-750-D13) 278

Medium power transistor( 80V, 0.7A) 2SB1189 / 2SB1238 Features Dimensions (Unit mm) 1) High breakdown voltage, BVCEO= 80V, and 2SB1189 high current, IC= 0.7A. 4.0 2) Complements the 2SD1767 / 2SD1859. 1.0 2.5 0.5 (1) (2) Absolute maximum ratings (Ta=25 C) (3) Parameter Symbol Limits Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1189 TRANSISTOR (PNP) 1. BASE FEATURES High breakdown voltage 2. COLLECTOR 1 Complements to 2SD1767 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO -80 V Collector-Base Voltage VCEO Collector-Emitter Volta

2SB1 1 8 9 TRANSISTOR(PNP) FEATURES High breakdown voltage Complements to 2SD1767 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -80 V Collector-Base Voltage VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.7 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150

2SB1189 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 1.8 2 1.4 1.4 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 MIN High breakdown voltage 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 Complements to 2SD1767 0.37 1.5 3.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value

SMD Type Transistors PNP Transistors 2SB1189 1.70 0.1 Features High breakdown voltage, BVCEO=-80V, and High Current, IC=-0.7A Complementary to 2SD1767 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage