All Transistors. 2SB1189Q Datasheet

 

2SB1189Q Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SB1189Q
   SMD Transistor Code: BDQ
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT89

 2SB1189Q Transistor Equivalent Substitute - Cross-Reference Search

   

2SB1189Q Datasheet (PDF)

 7.1. Size:42K  rohm
2sb1189.pdf

2SB1189Q

2SB1189 / 2SB1238 / 2SB899FTransistorsTransistors2SD1767 / 2SD1859 / 2SD1200F(96-618-B13)(96-750-D13)278

 7.2. Size:133K  rohm
2sb1189 2sb1238.pdf

2SB1189Q
2SB1189Q

Medium power transistor(80V, 0.7A) 2SB1189 / 2SB1238 Features Dimensions (Unit : mm) 1) High breakdown voltage, BVCEO=80V, and 2SB1189high current, IC=0.7A. 4.02) Complements the 2SD1767 / 2SD1859. 1.0 2.5 0.5 (1)(2)Absolute maximum ratings (Ta=25C) (3)Parameter Symbol Limits UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCE

 7.3. Size:1393K  jiangsu
2sb1189.pdf

2SB1189Q
2SB1189Q

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1189 TRANSISTOR (PNP) 1. BASE FEATURES High breakdown voltage 2. COLLECTOR 1 Complements to 2SD1767 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO -80 VCollector-Base Voltage VCEO Collector-Emitter Volta

 7.4. Size:271K  htsemi
2sb1189.pdf

2SB1189Q
2SB1189Q

2SB1 1 8 9TRANSISTOR(PNP)FEATURES High breakdown voltage Complements to 2SD1767 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -80 VCollector-Base Voltage VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.7 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150

 7.5. Size:216K  lge
2sb1189 sot-89.pdf

2SB1189Q
2SB1189Q

2SB1189 SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 1 4.6B4.41.61.82 1.41.43. EMITTER 3 2.64.252.43.75Features 0.8MIN High breakdown voltage 0.530.400.480.442x)0.13 B0.35 Complements to 2SD1767 0.371.53.0Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value

 7.6. Size:910K  kexin
2sb1189.pdf

2SB1189Q
2SB1189Q

SMD Type TransistorsPNP Transistors2SB11891.70 0.1 Features High breakdown voltage, BVCEO=-80V,and High Current, IC=-0.7A Complementary to 2SD17670.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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