2SB1191 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SB1197K Datasheet Low Frequency Transistor (-32V, -0.8A) lOutline l SOT-346 Parameter Value SC-59 VCEO -32V IC -800mA SMT3 lFeatures lInner circuit l l 1) Low VCE(sat). VCE(sat) -500mV ( IC= -500mA / IB= -50mA) 2) IC= -0.8A. 3) Complements the 2SD1781K. lApplication l LOW FREQUENCY POWER AMPLIFIER lPackaging specif

Transistors Low-frequency Transistor (*80V, *0.5A) 2SB1198K FFeatures FExternal dimensions (Unit s mm) 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FStructure Epitaxial planar type PNP silicon transistor SOT-89 FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C)

Transistors AEC-Q101 Qualified Low-frequency Transistor (*80V, *0.5A) 2SB1198KFRA 2SB1198K FFeatures FExternal dimensions (Unit s mm) 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 2SD1782KFRA 3) Complements the 2SD1782K. FStructure Epitaxial planar type PNP silicon transistor FAbsolute maximum ratings (Ta = 25_C) FE

MCC 2SB1197-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SB1197-Q CA 91311 Phone (818) 701-4933 2SB1197-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Epitaxial Transistors Small Package Mounting any position Epoxy me

UNISONIC TECHNOLOGIES CO., LTD 2SB1198 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR DESCRIPTION The UTC 2SB1198 is an epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage BVCEO= -80V * Low VCE(sat) VCE(sat)= -0.2V (Typ) (IC/IB = -0.5A/-50mA) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing

2SB1197 -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-23 Low VCE(sat).VCE(sat) -0.5V(IC / IB = -0.5A /-50mA) A IC =-0.8A L 3 Complements of the 2SD1781 3 Top View C B 1 1 2 CLASSIFICATION OF hFE 2 K E Product-Rank 2SB1197-P 2SB1197-Q 2SB1197-R

2SB1197K -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SC-59 Low VCE(sat).VCE(sat) -0.5V(IC / IB = -0.5A /-50mA) A IC =-0.8A L 3 3 Top View C B MECHANICAL DATA 1 Case SC-59, 1 2 2 K E Weight 0.008 grams(approx.) D CLASSIFICATION OF hFE H J

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SB1198 TRANSISTOR (PNP) FEATURES 1. BASE Low VCE(sat) 2. EMITTER High breakdown voltage 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 TRANSISTOR (PNP) SOT-23 FEATURES Unit mm 1. BASE Low VCE(sat).VCE(sat)

JMnic Product Specification Silicon PNP Power Transistors 2SB1193 DESCRIPTION With TO-220Fa package High DC current gain High speed switching DARLINGTON Complement to type 2SD1773 APPLICATIONS For medium speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum rating

JMnic Product Specification Silicon PNP Power Transistors 2SB1192 DESCRIPTION With TO-220Fa package High VCEO Large PC Complement to type 2SD1770 APPLICATIONS Power amplifier TV vertical deflection output PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base vol

JMnic Product Specification Silicon PNP Power Transistors 2SB1194 DESCRIPTION With TO-220Fa package High DC current gain High speed switching DARLINGTON Complement to type 2SD1633 APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25

JMnic Product Specification Silicon PNP Power Transistors 2SB1190 DESCRIPTION With TO-220 package High VCEO Large PC Complement to type 2SD1772 APPLICATIONS Power amplifier TV vertical deflection output PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings

2SB1 1 97 TRANSISTOR(PNP) SOT-23 1. BASE Unit mm FEATURES 2. EMITTER 3. COLLECTOR Low VCE(sat).VCE(sat)

2SB1197 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low VCE(sat).VCE(sat)

2SB1198K SOT-23-3L Transistor(PNP) 1. BASE SOT-23-3L 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features 2.80 1.60 Low VCE(sat) VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) High breakdown voltage BVCEO=-80V Complements the 2SD1782K 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collect

2SB1197K SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features 2.80 1.60 Power amplifier 0.15 1.90 MAXIMUM RATINGS* TA=25 unless otherwise noted Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector- Base Voltage -40 VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collec

2SB1197 PNP General Purpose Transistors 3 Pb Lead(Pb)-Free 1 2 Features SOT-23 * High current capacity in compact package. * Epitaxial planar type. * We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit VCBO Collector-Base Voltage -40 V Collector-Emitter Voltage VCEO -32 V VEBO Emitter-Base Voltage -5.0

FM120-M WILLAS 2SB1197KxLT1 THRU Low Frequency Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to PNP Silicon

LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series PNP Silicon FEATURE High current capacity in compact package. 3 IC = -0.8A. Epitaxial planar type. NPN complement L2SD1781K 1 We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applications Requiring Unique Site

LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series PNP Silicon FEATURE High current capacity in compact package. 3 IC = -0.8A. Epitaxial planar type. 1 NPN complement L2SD1781K We declare that the material of product compliance with RoHS requirements. 2 S- Prefix for Automotive and Other Applications Requiring Unique Site

SMD Type Transistors SMD Type PNP Transistors 2SB1197 (2SB1197K) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Low VCE(sat).VCE(sat) -0.5V IC / IB= -0.5A / -50mA . IC = -0.8A. 12 PNP silicon transistor +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCB

SMD Type Transistors PNP Transistors 2SB1198K SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-80V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SD1782K +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collec

CHENMKO ENTERPRISE CO.,LTD 2SB1197KGP SURFACE MOUNT PNP Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE SOT-23 * Small surface mounting type. (SOT-23) * Corrector peak current (Max.=1000mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High satu

2SB1197K Plastic-Encapsulate Transistors SOT-23 (PNP) FEATURES Very low VCE(sat). VCE(sat)

RoHS RoHS COMPLIANT COMPLIANT 2SB1197 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking 2SB1197-P AHP 2SB1197-Q AHQ 2SB1197-R AHR Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value

isc Silicon PNP Darlington Power Transistor 2SB1193 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -120V(Min) CEO(SUS) High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -4A) FE CE C Complement to Type 2SD1773 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for midium -speed power switching applications.

isc Silicon PNP Darlington Power Transistor 2SB1194 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) High DC Current Gain- h = 1500(Min)@ (V = -3V, I = -3A) FE CE C Complement to Type 2SD1633 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIM