2SB12 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

/ecdcle stage.neaunniettnnioacmaintenance typesplaned maintenance typeMidiscontinued typeplaned discontinued typedDMaintenance/Discontinued includes following four Product lifecyhttp://www.semicon.panasonic.co.jp/en/Please visit following URL about latest information./ecdcle stage.neaunniettnnio

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Ordering number:ENN2112BPNP/NPN Epitaxial Planar Silicon Transistors2SB1201/2SD1801High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2045B[2SB1201/2SD1801]Features6.52.35.0 Adoption of FBET, MBIT processes. 0.54 Large current capacity and wide ASO. Low colle

Ordering number:ENN2085BPNP/NPN Epitaxial Planar Silicon Transistors2SB1203/2SD1803High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1203/2SD1803]6.5Features2.35.00.54 Low collector-to-emitter saturation voltage. High c

Ordering number:ENN2539BPNP/NPN Epitaxial Planar Silicon Transistors2SB1215/2SD1815High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1215/2SD1815]6.5Features2.35.00.54 Low collector-to-emitter saturation voltage. Exclle

Ordering number : ENN2246B2SB1274/2SD1913PNP/NPN Epitaxial Planar Silicon Transistors2SB1274/2SD191360V/3A Low-FrequencyPower Amplifier ApplicationsApplicationsPackage Dimensions General power amplifier.unit : mm2041A[2SB1274/2SD1913]4.510.02.8Features3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High br

Ordering number:ENN2086BPNP/NPN Epitaxial Planar Silicon Transistors2SB1204/2SD1804High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1204/2SD1804]6.5Features2.35.00.54 Low collector-to-emitter saturation voltage. High c

Ordering number:ENN2113BPNP/NPN Epitaxial Planar Silicon Transistors2SB1202/2SD1802High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2045B[2SB1202/2SD1802]6.5Features2.35.00.54 Adoption of FBET, MBIT processes. Large currrent capacity and wide ASO. Low col

Ordering number:ENN2114BPNP Epitaxial Planar Silicon Transistor2SB1205Strobe High-Current Switching ApplicationsApplications Package Dimensions Strobe, voltage regulators, relay drivers, lampunit:mmdrivers.2045B[2SB1205]Features 6.52.35.00.5 Adoption of FBET, MBIT processes. 4 Low saturation voltage. Fast switching speed. Large current capacity.

Ordering number:ENN2540APNP/NPN Epitaxial Planar Silicon Transistors2SB1216/2SD1816High-Current Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general high-current switching2045Bapplications.[2SB1216/2SD1816]6.52.35.00.54Features Low collector-to-emitter saturation voltag

Power Transistor (80V, 1A) 2SB1260 / 2SB1181 / 2SB1241 Features Dimensions (Unit : mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181BVCEO=80V, IC = 1A 2.3+0.26.50.22) Good hFE linearty. C0.55.1+0.23) Low VCE(sat). 0.50.14.5+0.21.5Complements the 2SD1898 / 2SD1863 / 2SD1733. 1.60.10.650.1 0.75(1) (2) (3)0.90

Medium power transistor (32V, 2A) 2SB1188 / 2SB1182 / 2SB1240 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1188 2SB1182VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2.3+0.26.50.2-0.14.5+0.2-0.1 C0.52) Complements the 2SD1766 / 2SD1758 / 2SD1862. +0.2 5.1+0.21.5-0.1 -0.1 0.50.11.60.10.650.10.75(1) (2) (3)+0.1Structure 0.4-

Power Transistor (160V, 1.5A) 2SB1275 / 2SB1236A Features Dimensions (Unit : mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SB12755.5 1.5 (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 0.94) Complements the 2SD1918 / 2SD1857A. C0.50.8Min.1.52.59.5(1) Base(Gate)Absolute maximum ratings (Ta =

Power Transistor (-80V, -1A) 2SB1260 / 2SB1181 Features Dimensions (Unit : mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181BVCEO= -80V, IC = -1A 2.3+0.26.50.22) Good hFE linearty. C0.55.1+0.20.50.13) Low VCE(sat). 4.5+0.21.54) Complements the 2SD1898 / 2SD1733. 1.60.10.650.10.75(1) (2) (3)0.90.4+0.10.550.10.40.1 0.5

2SB1260 / 2SB1181 / 2SB1241TransistorsPower Transistor (-80V, -1A)2SB1260 / 2SB1181 / 2SB1241 Features External dimensions (Units : mm)1) High breakdown voltage and high2SB1260 2SB1181current.2.3+0.26.50.2-0.1C0.5BVCEO= -80V, IC=-1A5.1+0.2-0.1 0.50.14.5+0.2-0.12) Good hFE linearity.1.5+0.21.60.1 -0.13) Low VCE(sat).4) Complements the 2SD1898 /0.

2SB1292TransistorsTransistors2SB1832(94L-316-B75)(94L-872-D75)286

2SB1290TransistorsTransistors2SD1833(96-630-B55)(96-741-D55)285

Medium Power Transistor (32V,1A) 2SB1132 / 2SA1515S / 2SB1237 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1132 2SA1515SVCE(sat) = 0.2V(Typ.) + +4 0.2 2 0.2- -4.5 +0.2 -0.1(IC / IB = 500mA / 50mA) 1.5 +0.2+1.6 0.1 -0.1-2) Compliments 2SD1664 / 2SD1858 (1) (2) (3) 0.45 +0.15 -0.050.4 +0.1Structure -0.05++ 0.5 0.10.

Medium power transistor(80V, 0.7A) 2SB1189 / 2SB1238 Features Dimensions (Unit : mm) 1) High breakdown voltage, BVCEO=80V, and 2SB1189high current, IC=0.7A. 4.02) Complements the 2SD1767 / 2SD1859. 1.0 2.5 0.5 (1)(2)Absolute maximum ratings (Ta=25C) (3)Parameter Symbol Limits UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCE

2SB1183 / 2SB1239TransistorsPower transistor (-40V, -2A)2SB1183 / 2SB1239 External dimensions (Units : mm) Features1) Darlington connection for high DC current gain.2SB11832) Built-in 4k resistor between base and emitter.5.5 1.53) Complements the 2SD1759 / 2SD1861.0.9C0.5 Equivalent circuit0.8Min.1.5C2.59.5BROHM : CPT3 (1) Base(Gate)RBE 4k(2) Co

2SB1260 / 2SB1181Datasheet PNP -1.0A -80V Middle Power TransistorlOutlineCollector MPT3 CPT3Parameter ValueVCEO-80VBase Collector IC-1.0AEmitter Base Emitter 2SB1260 2SB1181 lFeatures(SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1898 / 2SD17333) Low VCE(sat)VCE(sat)= -0.4V Max. (IC/IB= -500mA/

Medium Power Transistor (32V,1A) 2SA1515S / 2SB1237 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SA1515S 2SB1237+2.5 0.2VCE(sat) = 0.2V(Typ.) + + +-4 0.2 2 0.2 6.8 0.2- - -(IC / IB = 500mA / 50mA) 2) Compliments 2SD1858 Structure 0.45 +0.15 0.65Max. -0.05Epitaxial planar type +PNP silicon transistor 0.5 0.1-0.45 +0.152.5

2SB1236TransistorsPower Transistor (-120V, -1.5A)2SB1236 Features External dimensions (Units : mm)1) High breakdown voltage. (BVCEO = -120V)2) Low collector output capacitance.2.56.8 (Typ. 30pF at VCB = -10V)3) High transition frequency. (fT = 50MHz)0.65Max.4) Complements the 2SD1857.0.5(1) (2) (3)2.54 2.541.05 0.45Taping specifications Absolute maximum ratin

Power Transistor (60V, 3A) 2SB1243 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1243VCE(sat) = -0.5V (Typ.) 2.50.2(IC/IB = -2A / -0.2A) 6.80.22) Complements the 2SD1864. Structure 0.65Max.Epitaxial planar type PNP silicon transistor 0.50.1(1) (2) (3)2.54 2.541.05 0.450.1(1) EmitterROHM : ATV (2) Collector(3) BaseAbsolute

TransistorsMedium power Transistor(*32V,*2A)2SB1188 / 2SB1182 / 2SB1240 /2SB822 / 2SB1277 / 2SB911MFFeatures FExternal dimensions (Unit: mm)1) Low VCE(sat).VCE(sat) = *0.5V (Typ.)(IC / IB = *2A / *0.2A)2) Complements the 2SD1766 /2SD1758 / 2SD1862 / 2SD1189F /2SD1055 / 2SD1919 / SD1227M.FStructureEpitaxial planar typePNP silicon transistor(96-131-B24)2152SB1188

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2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277

Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1184 2SB1243VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2.50.26.80.22.3 +0.26.50.2 -0.1C0.52) Complements the 2SD1760 / 2SD1864. 5.1 +0.2 -0.1 0.50.1Structure 0.65Max.0.650.10.75Epitaxial planar type 0.9PNP silicon transistor 0.550

TransistorsPower Transistor (*60V, *3A)2SB1184 / 2SB1243 / 2SB1185FFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = *0.5V (Typ.)(IC / IB = *2A / *0.2A)2) Complements the 2SD1760 /2SD1864 / 2SD1762.FStructureEpitaxial planar typePNP silicon transistor(96-128-B57)223Transistors 2SB1184 / 2SB1243 / 2SB1185FAbsolute maximum ratings (Ta = 25_C)FEle

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Medium power transistor (32V, 2A) 2SB1182 / 2SB1240 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1182 2SB1240VCE(sat) = 0.5V (Typ.) 2.50.26.80.2(IC/IB = 2A / 0.2A) 2.3+0.26.50.2-0.1C0.52) Complements 2SD1758 / 2SD1862. 5.1+0.2-0.1 0.50.10.65Max.0.650.1Structure 0.750.90.50.1Epitaxial planar type 0.550.1PN

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2SB1189 / 2SB1238TransistorsMedium power transistor (-80V, -0.7A)2SB1189 / 2SB1238 External dimensions (Units : mm) Features1) High breakdown voltage, BVCEO=-80V, and2SB11894.0high current, IC=-0.7A.1.0 2.5 0.52) Complements the 2SD1767 / 2SD1859.(1)(2)(3) Absolute maximum ratings (Ta=25C)Parameter Symbol Limits UnitCollector-base voltage VCBO -80 VCollecto

Ordering number : EN2112C2SB1201/2SD1801Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 2A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET, MBIT processes Large current capacitance and wide ASO Low collector-to-emitter saturation voltage Fast swit

Ordering number : EN2114C2SB1205Bipolar Transistorhttp://onsemi.com ( )20V, 5A, Low VCE sat , PNP Single TP/TP-FAApplications Flash, voltage regulators, relay drivers, lamp driversFeatures Adoption of FBET, MBIT processes Low saturation voltage Fast switching speed Large current capacity Small and slim package making it easy to make 2SB1205-a

Ordering number : EN2086C2SB1204Bipolar Transistorhttp://onsemi.com ( )50V, 8A, Low VCE sat , PNP Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE Fast switching s

Ordering number : EN2086C2SB1204Bipolar Transistorhttp://onsemi.com ( )50V, 8A, Low VCE sat , PNP Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE Fast switching s

Ordering number : EN2085C2SB1203/2SD1803Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 5A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE

Ordering number : EN2539C2SB1215/2SD1815Bipolar Transistorhttp://onsemi.com() () ( ) ( )100V, 3A, Low VCE sat PNP NPN Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector to emitter saturation voltage Excllent linearity of hFE Small-sized package permittin

Ordering number : EN2112C2SB1201/2SD1801Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 2A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET, MBIT processes Large current capacitance and wide ASO Low collector-to-emitter saturation voltage Fast swit

Ordering number : EN2540B2SB1216/2SD1816Bipolar Transistorhttp://onsemi.com() () ( ) ( )100V, 4A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector-to-emitter saturation voltage Good linearity of hFE Small and slim pac

Ordering number : EN2085C2SB1203/2SD1803Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 5A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE

2SB1202/2SD1802Bipolar Transistor()50 V, ()3 A, Low VCE(sat) (PNP)NPNSingle TP/TP-FAFeatures www.onsemi.com Adoption of FBET and MBIT Processes Large Current Capacitance and Wide ASO2.4 Low Collector to Emitter Saturation Voltage Fast Switching Speed1 Small and Slim Package Making it Easy to Make2SB1202/2SD1802-used Sets Smaller3 These Devices

Ordering number : EN2114C2SB1205Bipolar Transistorhttp://onsemi.com ( )20V, 5A, Low VCE sat , PNP Single TP/TP-FAApplications Flash, voltage regulators, relay drivers, lamp driversFeatures Adoption of FBET, MBIT processes Low saturation voltage Fast switching speed Large current capacity Small and slim package making it easy to make 2SB1205-a

2SB1216, 2SD1816 Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single www.onsemi.com Features Low Collector to Emitter Saturation Voltage Small and Slim Package Facilitating Compactness of Sets ELECTRICAL CONNECTION High fT Good Linearity of hFE 2,4 2,4 Fast Switching Time 1 11: BaseTypical Applications 2 : Collector3: Emitter

Transistor2SB1288Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmFor DC-DC converter5.0 0.2 4.0 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.0.7 0.1Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)+0.15 +0.150.45 0.1 0.45 0.1Parameter Sy

Transistor2SB1297Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD19375.0 0.2 4.0 0.2FeaturesExtremely satisfactory linearity of the forward current transferratio hFE.High transition frequency fT.Makes up a complementary pair with 2SD1937, which is opti-0.7 0.1mum for the pre-driver stage of a 40 to 60W output amp

Transistor2SB1207Silicon PNP epitaxial planer typeFor low-voltage output amplificationUnit: mm4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Optimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit1 2 3Collector to base voltage VCBO 15 VCollector to emi

Transistor2SB1209Silicon PNP triple diffusion planer typeFor low-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to base voltage VCBO.High collector to emitter voltage VCEO.Low collector to emitter saturation voltage VCE(sat).0.85Absolute Maximum Ratings (Ta=25C) 0.55 0.1 0.45 0.05Parameter Symbol Ratings Unit3 2 1

Transistor2SB1209Silicon PNP triple diffusion planer typeFor low-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to base voltage VCBO.High collector to emitter voltage VCEO.Low collector to emitter saturation voltage VCE(sat).0.85Absolute Maximum Ratings (Ta=25C) 0.55 0.1 0.45 0.05Parameter Symbol Ratings Unit3 2 1

Transistors2SB1219, 2SB1219ASilicon PNP epitaxial planer typeUnit: mmFor general amplification0.3+0.1 0.15+0.100.050.0Complementary to 2SD1820 and 2SD1820A3 Features Large collector current IC1 2 S-mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine (0.65) (0.65)1.30.1packing.2.0

Transistor2SB1219, 2SB1219ASilicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD1820 and 2SD1820AFeatures 2.1 0.10.425 1.25 0.1 0.425Large collector current IC.S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine1packing.3Absolute Maximum Ratings (Ta=25C)2

Transistor2SB1297Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD19375.0 0.2 4.0 0.2FeaturesExtremely satisfactory linearity of the forward current transferratio hFE.High transition frequency fT.Makes up a complementary pair with 2SD1937, which is opti-0.7 0.1mum for the pre-driver stage of a 40 to 60W output amp

Power Transistors2SB1252Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mm10.0 0.2 4.2 0.2Complementary to 2SD18925.5 0.2 2.7 0.2Features 3.1 0.1Optimum for 35W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

Transistor2SB1207Silicon PNP epitaxial planer typeFor low-voltage output amplificationUnit: mm4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Optimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit1 2 3Collector to base voltage VCBO 15 VCollector to emi

Transistor2SB1220Silicon PNP epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SD18212.1 0.1 0.425 1.25 0.1 0.425High collector to emitter voltage VCEO.Low noise voltage NV.S-Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazine3packing.2Absolute

Transistor2SB1221Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SC39415.0 0.2 4.0 0.2Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 250 V+0.15 +0.150.45 0.1 0.45

Transistor2SB1288Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmFor DC-DC converter5.0 0.2 4.0 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.0.7 0.1Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)+0.15 +0.150.45 0.1 0.45 0.1Parameter Sy

Power Transistors2SB1253Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SD189315.0 0.3 5.0 0.211.0 0.2 3.2FeaturesOptimum for 40W HiFi output 3.2 0.1High foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

Power Transistors2SB1255Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SD189515.0 0.3 5.0 0.211.0 0.2 3.2FeaturesOptimum for 90W HiFi output 3.2 0.1High foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):

Transistor2SB1218ASilicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD1819A2.1 0.10.425 1.25 0.1 0.425FeaturesHigh foward current transfer ratio hFE. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Paramet

Power Transistors2SB1254Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SD189415.0 0.3 5.0 0.211.0 0.2 3.2FeaturesOptimum for 60W HiFi output 3.2 0.1High foward current transfer ratio hFELow collector to emitter saturation voltage VCE(sat):

Transistor2SB1220Silicon PNP epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SD18212.1 0.1 0.425 1.25 0.1 0.425High collector to emitter voltage VCEO.Low noise voltage NV.S-Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazine3packing.2Absolute

Transistor2SB1221Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SC39415.0 0.2 4.0 0.2Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 250 V+0.15 +0.150.45 0.1 0.45

Transistor2SB1218ASilicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SD1819A2.1 0.10.425 1.25 0.1 0.425FeaturesHigh foward current transfer ratio hFE. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Paramet

Power Transistors2SB1299Silicon PNP epitaxial planar typeFor power amplificationUnit: mmComplementary to 2SD127310.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh foward current transfer ratio hFE 3.1 0.1Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1Absolute

UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 32SB1260G-x-A

UNISONIC TECHNOLOGIES CO., LTD 2SB1202 PNP PLANAR TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SB1202 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Large current capacity and wide ASO * Low collector-to-emitter saturation voltage * Fast switching speed ORDERI

2SB1260 -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 High breakdown voltage and high current BVCEO=-80V, IC=-1A 1 Good hFE linearity 23B C A Complements to 2SD1898 E ECPACKAGE INFORMATION B DWeight: 0.05 g (approximately) F G

2SB1218A -0.1A , -60V PNP Silicon Epitaxial Paner Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free APPLICATIONS SOT-323 General Purpose Amplification AL3FEATURES 3Top View C B High DC Current Gain 1 Complementary to 2SD1819A 1 22K ECLASSIFICATION OF hFE DProduct-Rank 2SB1218A-Q

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors2SB1261 TRANSISTOR (PNP)TO-252-2L FEATURES 1. BASE Low VCE(sat) High DC Current Gain 2. COLLECTOR2133. EMITTER Equivalent Circuit B1261=Device code B 1 2 6 1Solid dot=Green moldinn compound device, XXXXif none,the normal deviceXXXX=CodeMAXIMUM RATINGS (Ta=

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1260 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Power Transistor High Voltage and Current 3. EMITTER Low Collector-emitter saturation voltage Complements the 2SD1898 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Coll

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors TO-251-3L 2SB1261-Z TRANSISTOR (PNP) FEATURES 1. BASE High hFE Low VCE(sat) 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base V

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors2SB1274 TRANSISTOR (PNP)TO-220-3LFEATURES 1. BASE Wide ASO (Adoption of MBIT Process).2. COLLECTOR Low Saturation Voltage.3. EMITTER High Reliability. High Breakdown Voltage. Equivalent Circuit B1274=Device code Solid dot=Green moldinn compound device, if none,th

JMnic Product Specification Silicon PNP Power Transistors 2SB1227 DESCRIPTION With TO-220F package Complement to type 2SD1829 High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-voltage regulators. PINNING

JMnic Product Specification Silicon PNP Power Transistors 2SB1225 DESCRIPTION With TO-220F package Complement to type 2SD1827 High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators. PINNIN

JMnic Product Specification Silicon PNP Power Transistors 2SB1258 DESCRIPTION With TO-220F package Complement to type 2SD1785 High DC current gain DARLINGTON APPLICATIONS Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25

JMnic Product Specification Silicon PNP Power Transistors 2SB1226 DESCRIPTION With TO-220F package Complement to type 2SD1828 High DC current gain. Large current capacity and wide ASO. DARLINGTON APPLICATIONS Motor drivers,printer hammer drivers,relay drivers,voltage regulator control. PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (T

JMnic Product Specification Silicon PNP Power Transistors 2SB1230 DESCRIPTION With TO-3PN package Wide area of safe operation Complement to type 2SD1840 Low collector saturation voltage APPLICATIONS Motor drivers,relay drivers,converters and other general high-current switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounti

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1255 DESCRIPTION With TO-3PFa package Optimum for 90W Hi-Fi output High foward current transfer ratio hFE Low collector-emitter saturation voltage Complement to type 2SD1895 APPLICATIONS Power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(T

JMnic Product SpecificationSilicon PNP Power Transistors 2SB1228 DESCRIPTION With TO-220F package Complement to type 2SD1830 High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-voltage regulators. PINNING

JMnic Product Specification Silicon PNP Power Transistors 2SB1254 DESCRIPTION With TO-3PFa package Optimum for 60W HiFi output High foward current transfer ratio Low collector saturation voltage Complement to type 2SD1894 APPLICATIONS Power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARA

JMnic Product Specification Silicon PNP Power Transistors 2SB1257 DESCRIPTION With TO-220F package Complement to type 2SD2014 High DC current gain DARLINGTON APPLICATIONS Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25

JMnic Product Specification Silicon PNP Power Transistors 2SB1223 DESCRIPTION With TO-220F package Complement to type 2SD1825 High DC current gain. Large current capacity and wide ASO. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers,and constant-voltage regulators. PINNING PIN DESCRIPTION1 Base 2 CollectorF

E(3k)(100)BDarlington 2SB1258Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785)Application : Driver for Solenoid, Relay and Motor and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Symbol Conditions Ratings UnitUnit0.24.20.210.1c

E(3k)(100)BDarlington 2SB1259Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081)Application : Driver for Solenoid, Relay and Motor and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit 0.24.20.210.1c0.

E(2k)(650)BDarlington 2SB1257Equivalent circuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014)Application : Driver for Solenoid, Relay and Motor and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Symbol Conditions Ratings 0.2Unit Unit 5.50.215.60

SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1285 Case : MTO-3PUnit : mm(T15J10)-15A PNPRATINGS

SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1283 Case : ITO-220Unit : mm(TP7J10)A PNPRATINGS

SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1282 Case : ITO-220Unit : mm(TP4J10)4A PNPRATINGS

SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1284 Case : ITO-220Unit : mm(TP10J10)A PNPRATINGS

2SB1 260TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power Transistor High Voltage and Current 3. EMITTER Low Collector-emitter saturation voltage Complements the 2SD1898 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V

2SB1 21 8 ATRANSISTOR(PNP)FEATURES SOT323 High DC Current Gain Complementary to 2SD1819A APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -45 V CBO3. COLLECTOR VCEO Collector-Emitter Voltage -45 V V Emitter-Base Voltage -7 V EBOI

2SB1261 Transistor(PNP)1. BASE TO-252-2L 1 2. COLLECTOR 3. EMITTER Features High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) 0.3V Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collect

2SB1261-Z(PNP) TO-251/TO-252-2L TransistorTO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) 0.3V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2LSymbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current -

2SB1202(PNP)TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 FeaturesAdoption of FBET,MBIT processes Large current capacity and wide ASO Low collector-to-emitter saturation voltage Fast switching speed TO-252-2LMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector Base Voltage -60 V VCEO Collector

2SB1274(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector- Base Voltage -60 V VCEO Collector-E

2SB1260PNP Plastic-Encapsulate TransistorSOT-89121. BASE32. COLLECTOR3. EMITTERABSOLUTE MAXIMUM RATINGS(Ta=25%C)Rating UnitSymbolValue-80VdcCollector-Emitter VoltageVCEOVdcCollector-Base Voltage -80VCBOEmitter-Base Voltage VEBO -5.0 VdcIAdc(DC)C1.0Collector CurrentI2.0 Adc (Pulse)CPPCCollector Power Dissipation 0.5 WTj , Tstg %CJun

FM120-M WILLAS2SB1260 THRUSOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offersTRANSISTOR (PNP) better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted applicati

PNP PNP Epitaxial Silicon Transistor R2SB1261 MAIN CHARACTERISTICS I -3A CV -60V CEOP 2W CAPPLICATIONS Designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES hFE=-100-400

2SB1261 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features hFE Excellent hFE linearity, low VCE(sat), high PC. / Applications Audio f

2SB1261L(BR3CA1261QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F PNP Silicon PNP transistor in a TO-126F Plastic Package. / Features hFE Excellent hFE linearity, low VCE(sat), high PC. / Applications

SMD Type TransistorsPNP Transistors2SB1234SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-0.2A Collector Emitter Voltage VCEO=-50V1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SD18511.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

SMD Type TransistorsPNP Transistors2SB12601.70 0.1 Features Hight breakdown voltage and high current. Low collector-emitter saturation voltage VCE(sat) Good hFE linearty.0.42 0.10.46 0.1 Complementary to 2SD18981.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Colle

SMD Type TransistorsPNP Transistors2SB1266TO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Suitable for sets whose height is restricted Complementary to 2SD19020.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Un

SMD Type TransistorsPNP Transistors2SB1215TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector-to-emitter saturation voltage. High current and high fT Fast switching time. 0.127+0.10.80-0.1max Complementary to 2SD1815+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolut

SMD Type TransistorsPower Transistor2SB1260FeaturesHigh breakdown voltage and highcurrent.BVCEO=-80V, IC=-1AGood hFE linearity.Low VCE(sat).Epitaxial planar typePNP silicon transistorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEBO -5 VCollector current IC -1 A

SMD Type TransistorsPNP Transistors2SB1219 Features Large collector current IC Complementary to 2SD18201 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.5A Collector Cur

SMD Type TransistorsPNP Transistors2SB1275TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8 Features0.50 -0.7 High voltage :VCEO= -160V Suitable for Middle Power Driver Complementary to 2SD19180.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Pa

SMD Type TransistorsPNP Transistors2SB1261-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High hFE hFE = 100 to 400 Low VCE(sat) VCE(sat) 0.3 V0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Coll

SMD Type TransistorsPNP Transistors2SB1204TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 Features +0.80.50 -0.7 Low collector-to-emitter saturation voltage. High current and high fT Fast switching time.0.127+0.10.80-0.1max Complementary to 2SD1804+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolu

SMD Type TransistorsPNP Transistors2SB1202TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO.0.127+0.10.80-0.1max Complementary to 2SD1802+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitt

SMD Type TransistorsPNP Transistors2SB1216TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector-to-emitter saturation voltage. High current and high fT0.127 Fast switching time.+0.10.80-0.1max Complementary to 2SD1816+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absol

SMD Type TransistorsPNP Transistors2SB1220 Features High collector to emitter voltage VCEO. Low noise voltage NV. Complementary to 2SD18211 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -150 Collector - Emitter Voltage VCEO -150 V Emitter - Base Voltage VEBO -5 Collector Curr

SMD Type TransistorsPNP Transistors2SB1219A Features Large collector current IC Complementary to 2SD1820A1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.5A Collector C

SMD Type TransistorsPNP Transistors2SB1205TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector-to-emitter saturation voltage. High current and high fT0.127 Fast switching time.+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25

SMD Type TransistorsPNP Transistors2SB1203TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8 Features0.50 -0.7 Low collector-to-emitter saturation voltage. High current and high fT Fast switching speed0.127+0.10.80-0.1max Complementary to 2SD1803+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolu

SMD Type TransistorsPNP Transistors2SB1295SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Large current capacity. Low collector to emitter saturation voltage.1 2 Complimentary to 2SD1935.+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - B

SMD Type TransistorsPower Transistor2SB1260FeaturesHigh breakdown voltage and highcurrent.BVCEO=-80V, IC=-1AGood hFE linearity.Low VCE(sat).Epitaxial planar typePNP silicon transistorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEBO -5 VCollector current IC -1 A

SMD Type TransistorsPNP Transistors2SB1201TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO.0.127+0.10.80-0.1max Complementary to 2SD1801+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitt

SMD Type TransistorsPower Transistor2SB1260FeaturesHigh breakdown voltage and highcurrent.BVCEO=-80V, IC=-1AGood hFE linearity.Low VCE(sat).Epitaxial planar typePNP silicon transistorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEBO -5 VCollector current IC -1 A

SMD Type TransistorsPNP Transistors2SB1218A Features High DC Current Gain Complementary to 2SD1819A1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -45 Collector - Emitter Voltage VCEO -45 V Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -100 mA Collector Power D

2SB1203(3CA1203) PNP /SILICON PNP TRANSISTOR Purpose: Relay drivers, high-speed inverters, general high-current switching applications. :f TFeatures: Low V , high current and high f ,

2SB1204(3CA1204) PNP /SILICON PNP TRANSISTOR Purpose: Relay drivers, high-speed inverters, general high-current switching applications. :f TFeatures: Low V , high current and high f ,

2SB1217(3CA1217) PNP /SILICON PNP TRANSISTOR : DC-DC Purpose:It is suitable for DC-DC converter,or driver of solenoid or motor. : ,,, 2SD1818(3DA1818) Features: Low V ,large current, high P ,complementary to 2SD1818(3DA1818). CE(sat) C

2SB1237(3CA1237) PNP /SILICON PNP TRANSISTOR Purpose: Medium power amplifier applications. , 2SD1858(3DA1858) Features: Low saturation voltage, complements the 2SD1858(3DA1858). /Absolute maximum ratings(Ta=25) Symbol Rating Unit VCBO -40 V

2SB1274(3CA1274) PNP /SILICON PNP TRANSISTOR Purpose: Low frequency power amplifier applications. Features: High V ,low saturation voltage, wide ASO. CEO/Absolute maximum ratings(Ta=25) Symbol Rating Unit VCBO

2SB1240(3CA1240) PNP /SILICON PNP TRANSISTOR : Purpose: Medium power amplifier applications. - 2SD1862(3DA1862) Features: Low V ,complements the 2SD1862(3DA1862). CE(sat)/Absolute maximum ratings(Ta=25) Symbol Rating Unit V -40

2SB1261Silicon PNP Power TransistorsDESCRIPTIONLow Collector Saturation VoltageHigh Power Dissipation-: P = 10W(Max)@T =25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier and switching,especially in hybrid integrated circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

Plastic-Encapsulate TransistorsFEATURES2SB1260(PNP) High breakdown voltage and high current. BVCEO=-80V,IC=-1A Good hFEVLinearity. Low VCE(sat). Complements the 2SD1898.Marking: ZLMaximum Ratings (Ta=25 unless otherwise noted)1. BASEParameter Symbol Value Unit2. COLLECTO SOT-89Collector-Base Voltage VCBO -80 V3. EMITTERCollector-Emitter Voltage VCEO -80 V

isc Silicon PNP Power Transistor 2SB1231DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD1841Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, converters and other generalHigh-current switching app

isc Silicon PNP Power Transistor 2SB1293DESCRIPTIONHigh Collector Current:: I = -5ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1896Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

isc Silicon PNP Darlingtion Power Transistor 2SB1283DESCRIPTIONHigh DC Current Gain-: h = 1500(Min.)@I = -3AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -3ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, pulse motor drive

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB1273DESCRIPTIONHigh ReliabilityLow Collector Saturation Voltage: V = -1.0V(Max)@I = -2ACE(sat) CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Darlington Power Transistor 2SB1227DESCRIPTIONHigh DC Current Gain-: h = 1500(Min)@ (V = -3V, I = -2.5A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SD1829Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in control of motor drivers, printerhammer drivers, and constant

isc Silicon PNP Darlington Power Transistor 2SB1225DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -5A)FE CE CLarge Current Capability and Wide ASO.Low collector-to-emitter saturation voltageComplement to Type 2SD1827Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in control of motor d

isc Silicon PNP Darlington Power Transistor 2SB1258DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@I = -3AFE CComplement to Type 2SD1785Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDriver for solenoid, relay and motor and general purposeapplications.AB

isc Silicon PNP Power Transistor 2SB1215DESCRIPTIONExcellent linearity of hFESmall and slim package making it easy to make 2SB1215/2SD1815-used set smallerLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,High speed inve

isc Silicon PNP Power Transistor 2SB1292DESCRIPTIONHigh Collector Current:: I = -5ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1832Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

isc Silicon PNP Power Transistor 2SB1275DESCRIPTIONSuitable for middle power driversHigh voltage:V =-160VCEOComplementary NPN types:2SD1918100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor drivers,LED driver,Power supplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col

isc Silicon PNP Power Transistor 2SB1290DESCRIPTIONHigh Collector Current:: I = -7ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -4ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1833Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

isc Silicon PNP Darlington Power Transistor 2SB1226DESCRIPTIONHigh DC Current Gain-: h = 1500(Min)@ (V = -3V, I = -1.5A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SD1828Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in control of motor drivers, printerhammer drivers, and constant

isc Silicon PNP Power Transistor 2SB1204DESCRIPTIONHigh current and high fTLow collector-to-emitter saturation voltageExcellent linearity of hFEFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,high speed inverters,converters and othergeneral high-current swi

isc Silicon PNP Power Transistor 2SB1202DESCRIPTIONLarge current capacitance and wide ASOLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVoltage regulators,relay drivers,lamp drivers,electrical equipmentABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Power Transistor 2SB1216DESCRIPTIONExcellent linearity of hFESmall and slim package facilitating compactness of setsLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,High speed inverters,converters and ot

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1274 DESCRIPTION With TO-220F package Complement to type 2SD1913 High reliability. High breakdown voltage Low saturation voltage. Wide area of safe operation APPLICATIONS 60V/3A low-frequency power amplifier General power amplifier applications PINNING PIN DESCRIPTION1 Emitt

isc Silicon PNP Darlington Power Transistor 2SB1259DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@I = -5AFE CLow-Collector Saturation Voltage-: V = -1.5V(Max.)@I = -5ACE(sat) CComplement to Type 2SD2081Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio, series regulator and general purposeapplicati

isc Silicon NPN Power Transistors 2SB1261-KDESCRIPTIONLow Collector Saturation VoltageHigh Power Dissipation-: P = 10W(Max)@T =25C CComplement to Type 2SD1899-KMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio amplifier and switching,especially in hybrid integrated circuits.ABSOLUTE MAXIMUM

isc Silicon PNP Darlington Power Transistor 2SB1272DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h =1000(Min)@ (V = -2V, I = -1A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Power Transistor 2SB1230DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SD1840Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, converters and other generalHigh-current switching app

isc Silicon PNP Power Transistor 2SB1236DESCRIPTIONHigh breakdown voltage. (BV = -120V)CEOLow collector output capacitance.High transition frequency. (fT = 50MHz)Complement to Type 2SD1857Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio amplifier,voltage regulator, and general purpose power amplifie

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB1253DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -5AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -5ACE(sat) CComplement to Type 2SD1893Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for power amplifier applications

isc Silicon PNP Power Transistor 2SB1294DESCRIPTIONHigh Collector Current:: I = -5ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1897Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

isc Silicon PNP Darlington Power Transistor 2SB1287DESCRIPTIONHigh DC Current Gain-:h = 1000(Min)@ I = -1AFE CCollector-Emitter Breakdown Voltage-:V = -100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage:V = -1.5V(Max)@ I = -1ACE(sat) CComplement to Type 2SD1765Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION

isc Silicon PNP Darlington Power Transistor 2SB1255DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -6AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -7ACE(sat) CComplement to Type 2SD1895Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS

isc PNP Epitaxial Planar Silicon Transistor 2SB1214DESCRIPTIONHigh DC current gainCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -1.5V(Max) @I = -2.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,High speed inverters,converters and othergene

isc Silicon PNP Darlingtion Power Transistor 2SB1284DESCRIPTIONHigh DC Current Gain-: h = 1500(Min.)@I = -5AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, pulse motor drive

isc Silicon PNP Power Transistor 2SB1289DESCRIPTIONHigh Collector Current:: I = -7ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -4ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1580Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

isc Silicon PNP Power Transistor 2SB1291DESCRIPTIONHigh Collector Current: I = -5ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1720Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

isc Silicon PNP Power Transistor 2SB1205DESCRIPTIONLarge current capacityLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobe,voltage regulations,relay drivers,lamp driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

isc Silicon PNP Power Transistor 2SB1203DESCRIPTIONHigh current and high fTLow collector-to-emitter saturation voltageExcellent linearity of hFEFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,High speed inverters,converters and othergeneral high-current swi

isc Silicon PNP Darlington Power Transistor 2SB1228DESCRIPTIONHigh DC Current Gain-: h = 1500(Min)@ (V = -3V, I = -4A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SD1830Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in control of motor drivers, printerhammer drivers, and constant-v

isc Silicon PNP Darlington Power Transistor 2SB1254DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -6AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -6ACE(sat) CComplement to Type 2SD1894Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1257 DESCRIPTION With TO-220F package Complement to type 2SD2014 High DC current gain DARLINGTON APPLICATIONS Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maxim

isc Silicon PNP Darlington Power Transistor 2SB1223DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -2A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SD1825Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in control of motor drivers, printerhammer drivers, and constant-v

isc Silicon PNP Power Transistor 2SB1201DESCRIPTIONLarge current capacitance and wide ASOLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVoltage regulators,relay drivers,lamp drivers,electrical equipmentABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Darlington Power Transistor 2SB1286DESCRIPTIONHigh DC Current Gain-:h = 1000(Min)@ I = -1AFE CCollector-Emitter Breakdown Voltage-:V = -100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage:V = -1.5V(Max)@ I = -1ACE(sat) CComplement to Type 2SD1646Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION

isc Silicon PNP Power Transistor 2SB1217DESCRIPTIONHigh Collector Current -I = -3ACCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageComplement to Type 2SD1818Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converter, driver, solenid