2SB12 - описание и поиск аналогов

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Ordering number ENN2112B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1201/2SD1801 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2045B [2SB1201/2SD1801] Features 6.5 2.3 5.0 Adoption of FBET, MBIT processes. 0.5 4 Large current capacity and wide ASO. Low colle

Ordering number ENN2085B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1203/2SD1803 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1203/2SD1803] 6.5 Features 2.3 5.0 0.5 4 Low collector-to-emitter saturation voltage. High c

Ordering number ENN2539B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1215/2SD1815 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1215/2SD1815] 6.5 Features 2.3 5.0 0.5 4 Low collector-to-emitter saturation voltage. Exclle

Ordering number ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications Package Dimensions General power amplifier. unit mm 2041A [2SB1274/2SD1913] 4.5 10.0 2.8 Features 3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High br

Ordering number ENN2086B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1204/2SD1804 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1204/2SD1804] 6.5 Features 2.3 5.0 0.5 4 Low collector-to-emitter saturation voltage. High c

Ordering number ENN2113B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1202/2SD1802 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2045B [2SB1202/2SD1802] 6.5 Features 2.3 5.0 0.5 4 Adoption of FBET, MBIT processes. Large currrent capacity and wide ASO. Low col

Ordering number ENN2114B PNP Epitaxial Planar Silicon Transistor 2SB1205 Strobe High-Current Switching Applications Applications Package Dimensions Strobe, voltage regulators, relay drivers, lamp unit mm drivers. 2045B [2SB1205] Features 6.5 2.3 5.0 0.5 Adoption of FBET, MBIT processes. 4 Low saturation voltage. Fast switching speed. Large current capacity.

Ordering number ENN2540A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1216/2SD1816 High-Current Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general high-current switching 2045B applications. [2SB1216/2SD1816] 6.5 2.3 5.0 0.5 4 Features Low collector-to-emitter saturation voltag

Power Transistor ( 80V, 1A) 2SB1260 / 2SB1181 / 2SB1241 Features Dimensions (Unit mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181 BVCEO= 80V, IC = 1A 2.3+0.2 6.5 0.2 2) Good hFE linearty. C0.5 5.1+0.2 3) Low VCE(sat). 0.5 0.1 4.5+0.2 1.5 Complements the 2SD1898 / 2SD1863 / 2SD1733. 1.6 0.1 0.65 0.1 0.75 (1) (2) (3) 0.9 0

Medium power transistor ( 32V, 2A) 2SB1188 / 2SB1182 / 2SB1240 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1188 2SB1182 VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2.3+0.2 6.5 0.2 -0.1 4.5+0.2 -0.1 C0.5 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. +0.2 5.1+0.2 1.5-0.1 -0.1 0.5 0.1 1.6 0.1 0.65 0.1 0.75 (1) (2) (3) +0.1 Structure 0.4-

Power Transistor ( 160V, 1.5A) 2SB1275 / 2SB1236A Features Dimensions (Unit mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SB1275 5.5 1.5 (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 0.9 4) Complements the 2SD1918 / 2SD1857A. C0.5 0.8Min. 1.5 2.5 9.5 (1) Base(Gate) Absolute maximum ratings (Ta =

Power Transistor (-80V, -1A) 2SB1260 / 2SB1181 Features Dimensions (Unit mm) 1) Hight breakdown voltage and high current. 2SB1260 2SB1181 BVCEO= -80V, IC = -1A 2.3+0.2 6.5 0.2 2) Good hFE linearty. C0.5 5.1+0.2 0.5 0.1 3) Low VCE(sat). 4.5+0.2 1.5 4) Complements the 2SD1898 / 2SD1733. 1.6 0.1 0.65 0.1 0.75 (1) (2) (3) 0.9 0.4+0.1 0.55 0.1 0.4 0.1 0.5

2SB1260 / 2SB1181 / 2SB1241 Transistors Power Transistor (-80V, -1A) 2SB1260 / 2SB1181 / 2SB1241 Features External dimensions (Units mm) 1) High breakdown voltage and high 2SB1260 2SB1181 current. 2.3+0.2 6.5 0.2 -0.1 C0.5 BVCEO= -80V, IC=-1A 5.1+0.2 -0.1 0.5 0.1 4.5+0.2 -0.1 2) Good hFE linearity. 1.5+0.2 1.6 0.1 -0.1 3) Low VCE(sat). 4) Complements the 2SD1898 / 0.

2SB1292 Transistors Transistors 2SB1832 (94L-316-B75) (94L-872-D75) 286

2SB1290 Transistors Transistors 2SD1833 (96-630-B55) (96-741-D55) 285

Medium Power Transistor ( 32V, 1A) 2SB1132 / 2SA1515S / 2SB1237 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1132 2SA1515S VCE(sat) = 0.2V(Typ.) + + 4 0.2 2 0.2 - - 4.5 +0.2 -0.1 (IC / IB = 500mA / 50mA) 1.5 +0.2 + 1.6 0.1 -0.1 - 2) Compliments 2SD1664 / 2SD1858 (1) (2) (3) 0.45 +0.15 -0.05 0.4 +0.1 Structure -0.05 + + 0.5 0.1 0.

Medium power transistor( 80V, 0.7A) 2SB1189 / 2SB1238 Features Dimensions (Unit mm) 1) High breakdown voltage, BVCEO= 80V, and 2SB1189 high current, IC= 0.7A. 4.0 2) Complements the 2SD1767 / 2SD1859. 1.0 2.5 0.5 (1) (2) Absolute maximum ratings (Ta=25 C) (3) Parameter Symbol Limits Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCE

2SB1183 / 2SB1239 Transistors Power transistor (-40V, -2A) 2SB1183 / 2SB1239 External dimensions (Units mm) Features 1) Darlington connection for high DC current gain. 2SB1183 2) Built-in 4k resistor between base and emitter. 5.5 1.5 3) Complements the 2SD1759 / 2SD1861. 0.9 C0.5 Equivalent circuit 0.8Min. 1.5 C 2.5 9.5 B ROHM CPT3 (1) Base(Gate) RBE 4k (2) Co

2SB1260 / 2SB1181 Datasheet PNP -1.0A -80V Middle Power Transistor lOutline Collector MPT3 CPT3 Parameter Value VCEO -80V Base Collector IC -1.0A Emitter Base Emitter 2SB1260 2SB1181 lFeatures (SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SD1898 / 2SD1733 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -500mA/

Medium Power Transistor ( 32V, 1A) 2SA1515S / 2SB1237 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SA1515S 2SB1237 + 2.5 0.2 VCE(sat) = 0.2V(Typ.) + + + - 4 0.2 2 0.2 6.8 0.2 - - - (IC / IB = 500mA / 50mA) 2) Compliments 2SD1858 Structure 0.45 +0.15 0.65Max. -0.05 Epitaxial planar type + PNP silicon transistor 0.5 0.1 - 0.45 +0.15 2.5

2SB1236 Transistors Power Transistor (-120V, -1.5A) 2SB1236 Features External dimensions (Units mm) 1) High breakdown voltage. (BVCEO = -120V) 2) Low collector output capacitance. 2.5 6.8 (Typ. 30pF at VCB = -10V) 3) High transition frequency. (fT = 50MHz) 0.65Max. 4) Complements the 2SD1857. 0.5 (1) (2) (3) 2.54 2.54 1.05 0.45 Taping specifications Absolute maximum ratin

Power Transistor ( 60V, 3A) 2SB1243 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1243 VCE(sat) = -0.5V (Typ.) 2.5 0.2 (IC/IB = -2A / -0.2A) 6.8 0.2 2) Complements the 2SD1864. Structure 0.65Max. Epitaxial planar type PNP silicon transistor 0.5 0.1 (1) (2) (3) 2.54 2.54 1.05 0.45 0.1 (1) Emitter ROHM ATV (2) Collector (3) Base Absolute

Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures FExternal dimensions (Unit mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor (96-131-B24) 215 2SB1188

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2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277

Power Transistor (-60V, -3A) 2SB1184 / 2SB1243 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1184 2SB1243 VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2.5 0.2 6.8 0.2 2.3 +0.2 6.5 0.2 -0.1 C0.5 2) Complements the 2SD1760 / 2SD1864. 5.1 +0.2 -0.1 0.5 0.1 Structure 0.65Max. 0.65 0.1 0.75 Epitaxial planar type 0.9 PNP silicon transistor 0.55 0

Transistors Power Transistor (*60V, *3A) 2SB1184 / 2SB1243 / 2SB1185 FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FStructure Epitaxial planar type PNP silicon transistor (96-128-B57) 223 Transistors 2SB1184 / 2SB1243 / 2SB1185 FAbsolute maximum ratings (Ta = 25_C) FEle

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Medium power transistor ( 32V, 2A) 2SB1182 / 2SB1240 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1182 2SB1240 VCE(sat) = 0.5V (Typ.) 2.5 0.2 6.8 0.2 (IC/IB = 2A / 0.2A) 2.3+0.2 6.5 0.2 -0.1 C0.5 2) Complements 2SD1758 / 2SD1862. 5.1+0.2 -0.1 0.5 0.1 0.65Max. 0.65 0.1 Structure 0.75 0.9 0.5 0.1 Epitaxial planar type 0.55 0.1 PN

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2SB1189 / 2SB1238 Transistors Medium power transistor (-80V, -0.7A) 2SB1189 / 2SB1238 External dimensions (Units mm) Features 1) High breakdown voltage, BVCEO=-80V, and 2SB1189 4.0 high current, IC=-0.7A. 1.0 2.5 0.5 2) Complements the 2SD1767 / 2SD1859. (1) (2) (3) Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO -80 V Collecto

Ordering number EN2112C 2SB1201/2SD1801 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 2A, Low VCE sat , PNP NPN Single TP/TP-FA Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Large current capacitance and wide ASO Low collector-to-emitter saturation voltage Fast swit

Ordering number EN2114C 2SB1205 Bipolar Transistor http //onsemi.com ( ) 20V, 5A, Low VCE sat , PNP Single TP/TP-FA Applications Flash, voltage regulators, relay drivers, lamp drivers Features Adoption of FBET, MBIT processes Low saturation voltage Fast switching speed Large current capacity Small and slim package making it easy to make 2SB1205-a

Ordering number EN2086C 2SB1204 Bipolar Transistor http //onsemi.com ( ) 50V, 8A, Low VCE sat , PNP Single TP/TP-FA Applications Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE Fast switching s

Ordering number EN2086C 2SB1204 Bipolar Transistor http //onsemi.com ( ) 50V, 8A, Low VCE sat , PNP Single TP/TP-FA Applications Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE Fast switching s

Ordering number EN2539C 2SB1215/2SD1815 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 100V, 3A, Low VCE sat PNP NPN Single TP/TP-FA Applications Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector to emitter saturation voltage Excllent linearity of hFE Small-sized package permittin

Ordering number EN2112C 2SB1201/2SD1801 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 2A, Low VCE sat , PNP NPN Single TP/TP-FA Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Large current capacitance and wide ASO Low collector-to-emitter saturation voltage Fast swit

Ordering number EN2540B 2SB1216/2SD1816 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 100V, 4A, Low VCE sat , PNP NPN Single TP/TP-FA Applications Suitable for relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector-to-emitter saturation voltage Good linearity of hFE Small and slim pac

2SB1202/2SD1802 Bipolar Transistor ( )50 V, ( )3 A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features www.onsemi.com Adoption of FBET and MBIT Processes Large Current Capacitance and Wide ASO 2.4 Low Collector to Emitter Saturation Voltage Fast Switching Speed 1 Small and Slim Package Making it Easy to Make 2SB1202/2SD1802-used Sets Smaller 3 These Devices

Ordering number EN2114C 2SB1205 Bipolar Transistor http //onsemi.com ( ) 20V, 5A, Low VCE sat , PNP Single TP/TP-FA Applications Flash, voltage regulators, relay drivers, lamp drivers Features Adoption of FBET, MBIT processes Low saturation voltage Fast switching speed Large current capacity Small and slim package making it easy to make 2SB1205-a

2SB1216, 2SD1816 Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single www.onsemi.com Features Low Collector to Emitter Saturation Voltage Small and Slim Package Facilitating Compactness of Sets ELECTRICAL CONNECTION High fT Good Linearity of hFE 2,4 2,4 Fast Switching Time 1 1 1 Base Typical Applications 2 Collector 3 Emitter

Transistor 2SB1288 Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm For DC-DC converter 5.0 0.2 4.0 0.2 For stroboscope Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.7 0.1 Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) +0.15 +0.15 0.45 0.1 0.45 0.1 Parameter Sy

Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD1937 5.0 0.2 4.0 0.2 Features Extremely satisfactory linearity of the forward current transfer ratio hFE. High transition frequency fT. Makes up a complementary pair with 2SD1937, which is opti- 0.7 0.1 mum for the pre-driver stage of a 40 to 60W output amp

Transistor 2SB1207 Silicon PNP epitaxial planer type For low-voltage output amplification Unit mm 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 15 V Collector to emi

Transistor 2SB1209 Silicon PNP triple diffusion planer type For low-frequency amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). 0.85 Absolute Maximum Ratings (Ta=25 C) 0.55 0.1 0.45 0.05 Parameter Symbol Ratings Unit 3 2 1

Transistor 2SB1209 Silicon PNP triple diffusion planer type For low-frequency amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). 0.85 Absolute Maximum Ratings (Ta=25 C) 0.55 0.1 0.45 0.05 Parameter Symbol Ratings Unit 3 2 1

Transistors 2SB1219, 2SB1219A Silicon PNP epitaxial planer type Unit mm For general amplification 0.3+0.1 0.15+0.10 0.05 0.0 Complementary to 2SD1820 and 2SD1820A 3 Features Large collector current IC 1 2 S-mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine (0.65) (0.65) 1.3 0.1 packing. 2.0

Transistor 2SB1219, 2SB1219A Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD1820 and 2SD1820A Features 2.1 0.1 0.425 1.25 0.1 0.425 Large collector current IC. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 packing. 3 Absolute Maximum Ratings (Ta=25 C) 2

Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD1937 5.0 0.2 4.0 0.2 Features Extremely satisfactory linearity of the forward current transfer ratio hFE. High transition frequency fT. Makes up a complementary pair with 2SD1937, which is opti- 0.7 0.1 mum for the pre-driver stage of a 40 to 60W output amp

Power Transistors 2SB1252 Silicon PNP epitaxial planar type Darlington For power amplification Unit mm 10.0 0.2 4.2 0.2 Complementary to 2SD1892 5.5 0.2 2.7 0.2 Features 3.1 0.1 Optimum for 35W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)

Transistor 2SB1207 Silicon PNP epitaxial planer type For low-voltage output amplification Unit mm 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 15 V Collector to emi

Transistor 2SB1220 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SD1821 2.1 0.1 0.425 1.25 0.1 0.425 High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute

Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SC3941 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 250 V +0.15 +0.15 0.45 0.1 0.45

Transistor 2SB1288 Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm For DC-DC converter 5.0 0.2 4.0 0.2 For stroboscope Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.7 0.1 Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) +0.15 +0.15 0.45 0.1 0.45 0.1 Parameter Sy

Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Unit mm Complementary to 2SD1893 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features Optimum for 40W HiFi output 3.2 0.1 High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)

Power Transistors 2SB1255 Silicon PNP epitaxial planar type Darlington For power amplification Unit mm Complementary to 2SD1895 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features Optimum for 90W HiFi output 3.2 0.1 High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)

Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD1819A 2.1 0.1 0.425 1.25 0.1 0.425 Features High foward current transfer ratio hFE. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Paramet

Power Transistors 2SB1254 Silicon PNP epitaxial planar type Darlington For power amplification Unit mm Complementary to 2SD1894 15.0 0.3 5.0 0.2 11.0 0.2 3.2 Features Optimum for 60W HiFi output 3.2 0.1 High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat)

Transistor 2SB1220 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SD1821 2.1 0.1 0.425 1.25 0.1 0.425 High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute

Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SC3941 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 250 V +0.15 +0.15 0.45 0.1 0.45

Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SD1819A 2.1 0.1 0.425 1.25 0.1 0.425 Features High foward current transfer ratio hFE. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Paramet

Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification Unit mm Complementary to 2SD1273 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High foward current transfer ratio hFE 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute

UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity. * Low VCE(SAT) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 2SB1260G-x-A

UNISONIC TECHNOLOGIES CO., LTD 2SB1202 PNP PLANAR TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SB1202 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Large current capacity and wide ASO * Low collector-to-emitter saturation voltage * Fast switching speed ORDERI

2SB1260 -1 A, -80 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 High breakdown voltage and high current BVCEO=-80V, IC=-1A 1 Good hFE linearity 2 3 B C A Complements to 2SD1898 E E C PACKAGE INFORMATION B D Weight 0.05 g (approximately) F G

2SB1218A -0.1A , -60V PNP Silicon Epitaxial Paner Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free APPLICATIONS SOT-323 General Purpose Amplification A L 3 FEATURES 3 Top View C B High DC Current Gain 1 Complementary to 2SD1819A 1 2 2 K E CLASSIFICATION OF hFE D Product-Rank 2SB1218A-Q

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SB1261 TRANSISTOR (PNP) TO-252-2L FEATURES 1. BASE Low VCE(sat) High DC Current Gain 2. COLLECTOR 2 1 3 3. EMITTER Equivalent Circuit B1261=Device code B 1 2 6 1 Solid dot=Green moldinn compound device, XXXX if none,the normal device XXXX=Code MAXIMUM RATINGS (Ta=

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1260 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Power Transistor High Voltage and Current 3. EMITTER Low Collector-emitter saturation voltage Complements the 2SD1898 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Coll

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors TO-251-3L 2SB1261-Z TRANSISTOR (PNP) FEATURES 1. BASE High hFE Low VCE(sat) 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base V

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SB1274 TRANSISTOR (PNP) TO-220-3L FEATURES 1. BASE Wide ASO (Adoption of MBIT Process). 2. COLLECTOR Low Saturation Voltage. 3. EMITTER High Reliability. High Breakdown Voltage. Equivalent Circuit B1274=Device code Solid dot=Green moldinn compound device, if none,th

JMnic Product Specification Silicon PNP Power Transistors 2SB1227 DESCRIPTION With TO-220F package Complement to type 2SD1829 High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-voltage regulators. PINNING

JMnic Product Specification Silicon PNP Power Transistors 2SB1225 DESCRIPTION With TO-220F package Complement to type 2SD1827 High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators. PINNIN

JMnic Product Specification Silicon PNP Power Transistors 2SB1258 DESCRIPTION With TO-220F package Complement to type 2SD1785 High DC current gain DARLINGTON APPLICATIONS Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25

JMnic Product Specification Silicon PNP Power Transistors 2SB1226 DESCRIPTION With TO-220F package Complement to type 2SD1828 High DC current gain. Large current capacity and wide ASO. DARLINGTON APPLICATIONS Motor drivers,printer hammer drivers,relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (T

JMnic Product Specification Silicon PNP Power Transistors 2SB1230 DESCRIPTION With TO-3PN package Wide area of safe operation Complement to type 2SD1840 Low collector saturation voltage APPLICATIONS Motor drivers,relay drivers,converters and other general high-current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounti

JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1255 DESCRIPTION With TO-3PFa package Optimum for 90W Hi-Fi output High foward current transfer ratio hFE Low collector-emitter saturation voltage Complement to type 2SD1895 APPLICATIONS Power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(T

JMnic Product Specification Silicon PNP Power Transistors 2SB1228 DESCRIPTION With TO-220F package Complement to type 2SD1830 High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-voltage regulators. PINNING

JMnic Product Specification Silicon PNP Power Transistors 2SB1254 DESCRIPTION With TO-3PFa package Optimum for 60W HiFi output High foward current transfer ratio Low collector saturation voltage Complement to type 2SD1894 APPLICATIONS Power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARA

JMnic Product Specification Silicon PNP Power Transistors 2SB1257 DESCRIPTION With TO-220F package Complement to type 2SD2014 High DC current gain DARLINGTON APPLICATIONS Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25

JMnic Product Specification Silicon PNP Power Transistors 2SB1223 DESCRIPTION With TO-220F package Complement to type 2SD1825 High DC current gain. Large current capacity and wide ASO. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers,and constant-voltage regulators. PINNING PIN DESCRIPTION 1 Base 2 Collector F

E (3k )(100 ) B Darlington 2SB1258 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD1785) Application Driver for Solenoid, Relay and Motor and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 4.2 0.2 10.1 c

E (3k )(100 ) B Darlington 2SB1259 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081) Application Driver for Solenoid, Relay and Motor and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.2 0.2 10.1 c0.

E (2k )(650 ) B Darlington 2SB1257 Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) Application Driver for Solenoid, Relay and Motor and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Symbol Conditions Ratings 0.2 Unit Unit 5.5 0.2 15.6 0

SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1285 Case MTO-3P Unit mm (T15J10) -15A PNP RATINGS

SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1283 Case ITO-220 Unit mm (TP7J10) A PNP RATINGS

SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1282 Case ITO-220 Unit mm (TP4J10) 4A PNP RATINGS

SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1284 Case ITO-220 Unit mm (TP10J10) A PNP RATINGS

2SB1 260 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Power Transistor High Voltage and Current 3. EMITTER Low Collector-emitter saturation voltage Complements the 2SD1898 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V

2SB1 21 8 A TRANSISTOR(PNP) FEATURES SOT 323 High DC Current Gain Complementary to 2SD1819A APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -45 V CBO 3. COLLECTOR VCEO Collector-Emitter Voltage -45 V V Emitter-Base Voltage -7 V EBO I

2SB1261 Transistor(PNP) 1. BASE TO-252-2L 1 2. COLLECTOR 3. EMITTER Features High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) 0.3V Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collect

2SB1261-Z(PNP) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) 0.3V MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current -

2SB1202(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Adoption of FBET,MBIT processes Large current capacity and wide ASO Low collector-to-emitter saturation voltage Fast switching speed TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector Base Voltage -60 V VCEO Collector

2SB1274(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High breakdown voltage. MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector- Base Voltage -60 V VCEO Collector-E

2SB1260 PNP Plastic-Encapsulate Transistor SOT-89 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER ABSOLUTE MAXIMUM RATINGS(Ta=25%C) Rating Unit Symbol Value -80 Vdc Collector-Emitter Voltage VCEO Vdc Collector-Base Voltage -80 VCBO Emitter-Base Voltage VEBO -5.0 Vdc I Adc(DC) C 1.0 Collector Current I 2.0 Adc (Pulse) CP PC Collector Power Dissipation 0.5 W Tj , Tstg %C Jun

FM120-M WILLAS 2SB1260 THRU SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers TRANSISTOR (PNP) better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted applicati

PNP PNP Epitaxial Silicon Transistor R 2SB1261 MAIN CHARACTERISTICS I -3A C V -60V CEO P 2W C APPLICATIONS Designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES hFE=-100-400

2SB1261 Rev.E May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features hFE Excellent hFE linearity, low VCE(sat), high PC. / Applications Audio f

SMD Type Transistors PNP Transistors 2SB1234 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-0.2A Collector Emitter Voltage VCEO=-50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SD1851 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto

SMD Type Transistors PNP Transistors 2SB1260 1.70 0.1 Features Hight breakdown voltage and high current. Low collector-emitter saturation voltage VCE(sat) Good hFE linearty. 0.42 0.1 0.46 0.1 Complementary to 2SD1898 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Colle

SMD Type Transistors PNP Transistors 2SB1266 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Suitable for sets whose height is restricted Complementary to 2SD1902 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Un

SMD Type Transistors PNP Transistors 2SB1215 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low collector-to-emitter saturation voltage. High current and high fT Fast switching time. 0.127 +0.1 0.80-0.1 max Complementary to 2SD1815 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolut

SMD Type Transistors Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO=-80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -1 A

SMD Type Transistors PNP Transistors 2SB1219 Features Large collector current IC Complementary to 2SD1820 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -25 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.5 A Collector Cur

SMD Type Transistors PNP Transistors 2SB1275 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 Features 0.50 -0.7 High voltage VCEO= -160V Suitable for Middle Power Driver Complementary to 2SD1918 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Pa

SMD Type Transistors PNP Transistors 2SB1261-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High hFE hFE = 100 to 400 Low VCE(sat) VCE(sat) 0.3 V 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Coll

SMD Type Transistors PNP Transistors 2SB1204 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 Features +0.8 0.50 -0.7 Low collector-to-emitter saturation voltage. High current and high fT Fast switching time. 0.127 +0.1 0.80-0.1 max Complementary to 2SD1804 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolu

SMD Type Transistors PNP Transistors 2SB1202 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. 0.127 +0.1 0.80-0.1 max Complementary to 2SD1802 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitt

SMD Type Transistors PNP Transistors 2SB1216 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low collector-to-emitter saturation voltage. High current and high fT 0.127 Fast switching time. +0.1 0.80-0.1 max Complementary to 2SD1816 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absol

SMD Type Transistors PNP Transistors 2SB1220 Features High collector to emitter voltage VCEO. Low noise voltage NV. Complementary to 2SD1821 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -150 Collector - Emitter Voltage VCEO -150 V Emitter - Base Voltage VEBO -5 Collector Curr

SMD Type Transistors PNP Transistors 2SB1219A Features Large collector current IC Complementary to 2SD1820A 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -0.5 A Collector C

SMD Type Transistors PNP Transistors 2SB1205 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low collector-to-emitter saturation voltage. High current and high fT 0.127 Fast switching time. +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25

SMD Type Transistors PNP Transistors 2SB1203 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 Features 0.50 -0.7 Low collector-to-emitter saturation voltage. High current and high fT Fast switching speed 0.127 +0.1 0.80-0.1 max Complementary to 2SD1803 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolu

SMD Type Transistors PNP Transistors 2SB1295 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Large current capacity. Low collector to emitter saturation voltage. 1 2 Complimentary to 2SD1935. +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - B

SMD Type Transistors Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO=-80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -1 A

SMD Type Transistors PNP Transistors 2SB1201 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. 0.127 +0.1 0.80-0.1 max Complementary to 2SD1801 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitt

SMD Type Transistors Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO=-80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V Collector current IC -1 A

SMD Type Transistors PNP Transistors 2SB1218A Features High DC Current Gain Complementary to 2SD1819A 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -45 Collector - Emitter Voltage VCEO -45 V Emitter - Base Voltage VEBO -7 Collector Current - Continuous IC -100 mA Collector Power D

2SB1203(3CA1203) PNP /SILICON PNP TRANSISTOR Purpose Relay drivers, high-speed inverters, general high-current switching applications. f T Features Low V , high current and high f ,

2SB1204(3CA1204) PNP /SILICON PNP TRANSISTOR Purpose Relay drivers, high-speed inverters, general high-current switching applications. f T Features Low V , high current and high f ,

2SB1237(3CA1237) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1858(3DA1858) Features Low saturation voltage, complements the 2SD1858(3DA1858). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V CBO -40 V

2SB1274(3CA1274) PNP /SILICON PNP TRANSISTOR Purpose Low frequency power amplifier applications. Features High V ,low saturation voltage, wide ASO. CEO /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V CBO

2SB1240(3CA1240) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. - 2SD1862(3DA1862) Features Low V ,complements the 2SD1862(3DA1862). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40

2SB1261 Silicon PNP Power Transistors DESCRIPTION Low Collector Saturation Voltage High Power Dissipation- P = 10W(Max)@T =25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier and switching, especially in hybrid integrated circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

Plastic-Encapsulate Transistors FEATURES 2SB1260(PNP) High breakdown voltage and high current. BVCEO=-80V,IC=-1A Good hFEVLinearity. Low VCE(sat). Complements the 2SD1898. Marking ZL Maximum Ratings (Ta=25 unless otherwise noted) 1. BASE Parameter Symbol Value Unit 2. COLLECTO SOT-89 Collector-Base Voltage VCBO -80 V 3. EMITTER Collector-Emitter Voltage VCEO -80 V

isc Silicon PNP Power Transistor 2SB1231 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Complement to Type 2SD1841 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, converters and other general High-current switching app

isc Silicon PNP Power Transistor 2SB1293 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -1.0V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1896 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE

isc Silicon PNP Darlingtion Power Transistor 2SB1283 DESCRIPTION High DC Current Gain- h = 1500(Min.)@I = -3A FE C Low Collector Saturation Voltage- V = -1.5V(Max)@I = -3A CE(sat) C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications. Hammer drive, pulse motor drive

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1273 DESCRIPTION High Reliability Low Collector Saturation Voltage V = -1.0V(Max)@I = -2A CE(sat) C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Darlington Power Transistor 2SB1227 DESCRIPTION High DC Current Gain- h = 1500(Min)@ (V = -3V, I = -2.5A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SD1829 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, and constant

isc Silicon PNP Darlington Power Transistor 2SB1225 DESCRIPTION High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -5A) FE CE C Large Current Capability and Wide ASO. Low collector-to-emitter saturation voltage Complement to Type 2SD1827 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor d

isc Silicon PNP Darlington Power Transistor 2SB1258 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@I = -3A FE C Complement to Type 2SD1785 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Driver for solenoid, relay and motor and general purpose applications. AB

isc Silicon PNP Power Transistor 2SB1215 DESCRIPTION Excellent linearity of h FE Small and slim package making it easy to make 2SB1215/2SD1815-used set smaller Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,High speed inve

isc Silicon PNP Power Transistor 2SB1292 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1832 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE

isc Silicon PNP Power Transistor 2SB1275 DESCRIPTION Suitable for middle power drivers High voltage V =-160V CEO Complementary NPN types 2SD1918 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col

isc Silicon PNP Power Transistor 2SB1290 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -1.0V(Max)@I = -4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1833 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE

isc Silicon PNP Darlington Power Transistor 2SB1226 DESCRIPTION High DC Current Gain- h = 1500(Min)@ (V = -3V, I = -1.5A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SD1828 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, and constant

isc Silicon PNP Power Transistor 2SB1204 DESCRIPTION High current and high f T Low collector-to-emitter saturation voltage Excellent linearity of h FE Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,high speed inverters,converters and other general high-current swi

isc Silicon PNP Power Transistor 2SB1216 DESCRIPTION Excellent linearity of h FE Small and slim package facilitating compactness of sets Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,High speed inverters,converters and ot

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1274 DESCRIPTION With TO-220F package Complement to type 2SD1913 High reliability. High breakdown voltage Low saturation voltage. Wide area of safe operation APPLICATIONS 60V/3A low-frequency power amplifier General power amplifier applications PINNING PIN DESCRIPTION 1 Emitt

isc Silicon PNP Darlington Power Transistor 2SB1259 DESCRIPTION High DC Current Gain- h = 2000(Min)@I = -5A FE C Low-Collector Saturation Voltage- V = -1.5V(Max.)@I = -5A CE(sat) C Complement to Type 2SD2081 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio, series regulator and general purpose applicati

isc Silicon NPN Power Transistors 2SB1261-K DESCRIPTION Low Collector Saturation Voltage High Power Dissipation- P = 10W(Max)@T =25 C C Complement to Type 2SD1899-K Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio amplifier and switching, especially in hybrid integrated circuits. ABSOLUTE MAXIMUM

isc Silicon PNP Power Transistor 2SB1230 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Complement to Type 2SD1840 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, converters and other general High-current switching app

isc Silicon PNP Power Transistor 2SB1236 DESCRIPTION High breakdown voltage. (BV = -120V) CEO Low collector output capacitance. High transition frequency. (fT = 50MHz) Complement to Type 2SD1857 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio amplifier, voltage regulator, and general purpose power amplifie

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1253 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -5A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -5A CE(sat) C Complement to Type 2SD1893 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications

isc Silicon PNP Power Transistor 2SB1294 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -1.0V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1897 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE

isc Silicon PNP Darlington Power Transistor 2SB1287 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -1A FE C Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage V = -1.5V(Max)@ I = -1A CE(sat) C Complement to Type 2SD1765 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

isc Silicon PNP Darlington Power Transistor 2SB1255 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -6A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -7A CE(sat) C Complement to Type 2SD1895 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS

isc PNP Epitaxial Planar Silicon Transistor 2SB1214 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.5V(Max) @I = -2.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,High speed inverters,converters and other gene

isc Silicon PNP Darlingtion Power Transistor 2SB1284 DESCRIPTION High DC Current Gain- h = 1500(Min.)@I = -5A FE C Low Collector Saturation Voltage- V = -1.5V(Max)@I = -5A CE(sat) C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications. Hammer drive, pulse motor drive

isc Silicon PNP Power Transistor 2SB1289 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -1.0V(Max)@I = -4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1580 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE

isc Silicon PNP Power Transistor 2SB1291 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1720 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE

isc Silicon PNP Power Transistor 2SB1205 DESCRIPTION Large current capacity Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Strobe,voltage regulations,relay drivers,lamp drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

isc Silicon PNP Power Transistor 2SB1203 DESCRIPTION High current and high f T Low collector-to-emitter saturation voltage Excellent linearity of h FE Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,High speed inverters,converters and other general high-current swi

isc Silicon PNP Darlington Power Transistor 2SB1228 DESCRIPTION High DC Current Gain- h = 1500(Min)@ (V = -3V, I = -4A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SD1830 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, and constant-v

isc Silicon PNP Darlington Power Transistor 2SB1254 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -6A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -6A CE(sat) C Complement to Type 2SD1894 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1257 DESCRIPTION With TO-220F package Complement to type 2SD2014 High DC current gain DARLINGTON APPLICATIONS Driver for solenoid ,relay and motor and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maxim

isc Silicon PNP Darlington Power Transistor 2SB1223 DESCRIPTION High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -2A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SD1825 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, and constant-v

isc Silicon PNP Darlington Power Transistor 2SB1286 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -1A FE C Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage V = -1.5V(Max)@ I = -1A CE(sat) C Complement to Type 2SD1646 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

isc Silicon PNP Power Transistor 2SB1217 DESCRIPTION High Collector Current -I = -3A C Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Complement to Type 2SD1818 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter, driver, solenid