2SB120 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB120
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 32 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.02 A
Temperatura operativa máxima (Tj): 75 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 0.2 MHz
Ganancia de corriente contínua (hFE): 70
Encapsulados: TO1
Búsqueda de reemplazo de 2SB120
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2SB120 datasheet
0.1. Size:111K sanyo
2sb1201 2sd1801.pdf 
Ordering number ENN2112B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1201/2SD1801 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2045B [2SB1201/2SD1801] Features 6.5 2.3 5.0 Adoption of FBET, MBIT processes. 0.5 4 Large current capacity and wide ASO. Low colle
0.3. Size:111K sanyo
2sb1203 2sd1803.pdf
Ordering number ENN2085B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1203/2SD1803 High-Current Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2045B [2SB1203/2SD1803] 6.5 Features 2.3 5.0 0.5 4 Low collector-to-emitter saturation voltage. High c
0.5. Size:58K sanyo
2sb1202 2sd1802.pdf
Ordering number ENN2113B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1202/2SD1802 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2045B [2SB1202/2SD1802] 6.5 Features 2.3 5.0 0.5 4 Adoption of FBET, MBIT processes. Large currrent capacity and wide ASO. Low col
0.6. Size:50K sanyo
2sb1205.pdf
Ordering number ENN2114B PNP Epitaxial Planar Silicon Transistor 2SB1205 Strobe High-Current Switching Applications Applications Package Dimensions Strobe, voltage regulators, relay drivers, lamp unit mm drivers. 2045B [2SB1205] Features 6.5 2.3 5.0 0.5 Adoption of FBET, MBIT processes. 4 Low saturation voltage. Fast switching speed. Large current capacity.
0.9. Size:388K onsemi
2sb1201 2sd1801.pdf
Ordering number EN2112C 2SB1201/2SD1801 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 2A, Low VCE sat , PNP NPN Single TP/TP-FA Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Large current capacitance and wide ASO Low collector-to-emitter saturation voltage Fast swit
0.10. Size:283K onsemi
2sb1205s 2sb1205t.pdf
Ordering number EN2114C 2SB1205 Bipolar Transistor http //onsemi.com ( ) 20V, 5A, Low VCE sat , PNP Single TP/TP-FA Applications Flash, voltage regulators, relay drivers, lamp drivers Features Adoption of FBET, MBIT processes Low saturation voltage Fast switching speed Large current capacity Small and slim package making it easy to make 2SB1205-a
0.11. Size:283K onsemi
2sb1204s-e 2sb1204s 2sb1204t-e 2sb1204t.pdf
Ordering number EN2086C 2SB1204 Bipolar Transistor http //onsemi.com ( ) 50V, 8A, Low VCE sat , PNP Single TP/TP-FA Applications Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE Fast switching s
0.12. Size:378K onsemi
2sb1204.pdf
Ordering number EN2086C 2SB1204 Bipolar Transistor http //onsemi.com ( ) 50V, 8A, Low VCE sat , PNP Single TP/TP-FA Applications Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE Fast switching s
0.14. Size:305K onsemi
2sb1201s-e 2sb1201s 2sb1201t-e 2sb1201t.pdf
Ordering number EN2112C 2SB1201/2SD1801 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 2A, Low VCE sat , PNP NPN Single TP/TP-FA Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Large current capacitance and wide ASO Low collector-to-emitter saturation voltage Fast swit
0.16. Size:278K onsemi
2sb1202 2sd1802.pdf
2SB1202/2SD1802 Bipolar Transistor ( )50 V, ( )3 A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features www.onsemi.com Adoption of FBET and MBIT Processes Large Current Capacitance and Wide ASO 2.4 Low Collector to Emitter Saturation Voltage Fast Switching Speed 1 Small and Slim Package Making it Easy to Make 2SB1202/2SD1802-used Sets Smaller 3 These Devices
0.17. Size:368K onsemi
2sb1205.pdf
Ordering number EN2114C 2SB1205 Bipolar Transistor http //onsemi.com ( ) 20V, 5A, Low VCE sat , PNP Single TP/TP-FA Applications Flash, voltage regulators, relay drivers, lamp drivers Features Adoption of FBET, MBIT processes Low saturation voltage Fast switching speed Large current capacity Small and slim package making it easy to make 2SB1205-a
0.18. Size:40K panasonic
2sb1207 e.pdf
Transistor 2SB1207 Silicon PNP epitaxial planer type For low-voltage output amplification Unit mm 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 15 V Collector to emi
0.19. Size:42K panasonic
2sb1209 e.pdf
Transistor 2SB1209 Silicon PNP triple diffusion planer type For low-frequency amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). 0.85 Absolute Maximum Ratings (Ta=25 C) 0.55 0.1 0.45 0.05 Parameter Symbol Ratings Unit 3 2 1
0.20. Size:38K panasonic
2sb1209.pdf
Transistor 2SB1209 Silicon PNP triple diffusion planer type For low-frequency amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). 0.85 Absolute Maximum Ratings (Ta=25 C) 0.55 0.1 0.45 0.05 Parameter Symbol Ratings Unit 3 2 1
0.21. Size:36K panasonic
2sb1207.pdf
Transistor 2SB1207 Silicon PNP epitaxial planer type For low-voltage output amplification Unit mm 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 15 V Collector to emi
0.22. Size:261K utc
2sb1202.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SB1202 PNP PLANAR TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SB1202 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Large current capacity and wide ASO * Low collector-to-emitter saturation voltage * Fast switching speed ORDERI
0.23. Size:218K lge
2sb1202.pdf
2SB1202(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features Adoption of FBET,MBIT processes Large current capacity and wide ASO Low collector-to-emitter saturation voltage Fast switching speed TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector Base Voltage -60 V VCEO Collector
0.24. Size:932K kexin
2sb1204.pdf
SMD Type Transistors PNP Transistors 2SB1204 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 Features +0.8 0.50 -0.7 Low collector-to-emitter saturation voltage. High current and high fT Fast switching time. 0.127 +0.1 0.80-0.1 max Complementary to 2SD1804 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolu
0.25. Size:821K kexin
2sb1202.pdf
SMD Type Transistors PNP Transistors 2SB1202 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. 0.127 +0.1 0.80-0.1 max Complementary to 2SD1802 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitt
0.26. Size:1261K kexin
2sb1205.pdf
SMD Type Transistors PNP Transistors 2SB1205 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low collector-to-emitter saturation voltage. High current and high fT 0.127 Fast switching time. +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25
0.27. Size:1272K kexin
2sb1203.pdf
SMD Type Transistors PNP Transistors 2SB1203 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 Features 0.50 -0.7 Low collector-to-emitter saturation voltage. High current and high fT Fast switching speed 0.127 +0.1 0.80-0.1 max Complementary to 2SD1803 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolu
0.28. Size:1558K kexin
2sb1201.pdf
SMD Type Transistors PNP Transistors 2SB1201 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. 0.127 +0.1 0.80-0.1 max Complementary to 2SD1801 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitt
0.29. Size:300K lzg
2sb1203 3ca1203.pdf
2SB1203(3CA1203) PNP /SILICON PNP TRANSISTOR Purpose Relay drivers, high-speed inverters, general high-current switching applications. f T Features Low V , high current and high f ,
0.30. Size:261K lzg
2sb1204 3ca1204.pdf
2SB1204(3CA1204) PNP /SILICON PNP TRANSISTOR Purpose Relay drivers, high-speed inverters, general high-current switching applications. f T Features Low V , high current and high f ,
0.31. Size:254K inchange semiconductor
2sb1204.pdf
isc Silicon PNP Power Transistor 2SB1204 DESCRIPTION High current and high f T Low collector-to-emitter saturation voltage Excellent linearity of h FE Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,high speed inverters,converters and other general high-current swi
0.33. Size:253K inchange semiconductor
2sb1205.pdf
isc Silicon PNP Power Transistor 2SB1205 DESCRIPTION Large current capacity Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Strobe,voltage regulations,relay drivers,lamp drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
0.34. Size:253K inchange semiconductor
2sb1203.pdf
isc Silicon PNP Power Transistor 2SB1203 DESCRIPTION High current and high f T Low collector-to-emitter saturation voltage Excellent linearity of h FE Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,High speed inverters,converters and other general high-current swi
Otros transistores... 2SB1194
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