2SB120 - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор 2SB120 Даташит. Аналоги

   Наименование производителя: 2SB120
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 32 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
   Макcимальный постоянный ток коллектора (Ic): 0.02 A
   Предельная температура PN-перехода (Tj): 75 °C
   Граничная частота коэффициента передачи тока (ft): 0.2 MHz
   Статический коэффициент передачи тока (hfe): 70
   Корпус транзистора: TO1

Аналоги (замена) для 2SB120

- подбор биполярного транзистора по параметрам

2SB120 Datasheet (PDF)

0.1. Size:111K sanyo
2sb1201 2sd1801.pdf pdf_icon

Ordering number:ENN2112BPNP/NPN Epitaxial Planar Silicon Transistors2SB1201/2SD1801High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2045B[2SB1201/2SD1801]Features6.52.35.0 Adoption of FBET, MBIT processes. 0.54 Large current capacity and wide ASO. Low colle

0.2. Size:132K sanyo
2sb1204.pdf pdf_icon

0.3. Size:111K sanyo
2sb1203 2sd1803.pdf pdf_icon

Ordering number:ENN2085BPNP/NPN Epitaxial Planar Silicon Transistors2SB1203/2SD1803High-Current Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2045B[2SB1203/2SD1803]6.5Features2.35.00.54 Low collector-to-emitter saturation voltage. High c

0.4. Size:128K sanyo
2sb1202.pdf pdf_icon

0.5. Size:58K sanyo
2sb1202 2sd1802.pdf pdf_icon

Ordering number:ENN2113BPNP/NPN Epitaxial Planar Silicon Transistors2SB1202/2SD1802High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2045B[2SB1202/2SD1802]6.5Features2.35.00.54 Adoption of FBET, MBIT processes. Large currrent capacity and wide ASO. Low col

0.6. Size:50K sanyo
2sb1205.pdf pdf_icon

Ordering number:ENN2114BPNP Epitaxial Planar Silicon Transistor2SB1205Strobe High-Current Switching ApplicationsApplications Package Dimensions Strobe, voltage regulators, relay drivers, lampunit:mmdrivers.2045B[2SB1205]Features 6.52.35.00.5 Adoption of FBET, MBIT processes. 4 Low saturation voltage. Fast switching speed. Large current capacity.

0.7. Size:135K sanyo
2sb1203.pdf pdf_icon

0.8. Size:123K sanyo
2sb1201.pdf pdf_icon

0.9. Size:388K onsemi
2sb1201 2sd1801.pdf pdf_icon

Ordering number : EN2112C2SB1201/2SD1801Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 2A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET, MBIT processes Large current capacitance and wide ASO Low collector-to-emitter saturation voltage Fast swit

0.10. Size:283K onsemi
2sb1205s 2sb1205t.pdf pdf_icon

Ordering number : EN2114C2SB1205Bipolar Transistorhttp://onsemi.com ( )20V, 5A, Low VCE sat , PNP Single TP/TP-FAApplications Flash, voltage regulators, relay drivers, lamp driversFeatures Adoption of FBET, MBIT processes Low saturation voltage Fast switching speed Large current capacity Small and slim package making it easy to make 2SB1205-a

0.11. Size:283K onsemi
2sb1204s-e 2sb1204s 2sb1204t-e 2sb1204t.pdf pdf_icon

Ordering number : EN2086C2SB1204Bipolar Transistorhttp://onsemi.com ( )50V, 8A, Low VCE sat , PNP Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE Fast switching s

0.12. Size:378K onsemi
2sb1204.pdf pdf_icon

0.13. Size:392K onsemi
2sb1203 2sd1803.pdf pdf_icon

Ordering number : EN2085C2SB1203/2SD1803Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 5A, Low VCE sat , PNP NPN Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE

0.14. Size:305K onsemi
2sb1201s-e 2sb1201s 2sb1201t-e 2sb1201t.pdf pdf_icon

0.15. Size:306K onsemi
2sb1203s-e 2sb1203s-h 2sb1203s 2sb1203s 2sb1203t-e 2sb1203t-h 2sb1203t 2sb1203t.pdf pdf_icon

0.16. Size:278K onsemi
2sb1202 2sd1802.pdf pdf_icon

2SB1202/2SD1802Bipolar Transistor()50 V, ()3 A, Low VCE(sat) (PNP)NPNSingle TP/TP-FAFeatures www.onsemi.com Adoption of FBET and MBIT Processes Large Current Capacitance and Wide ASO2.4 Low Collector to Emitter Saturation Voltage Fast Switching Speed1 Small and Slim Package Making it Easy to Make2SB1202/2SD1802-used Sets Smaller3 These Devices

0.17. Size:368K onsemi
2sb1205.pdf pdf_icon

0.18. Size:40K panasonic
2sb1207 e.pdf pdf_icon

Transistor2SB1207Silicon PNP epitaxial planer typeFor low-voltage output amplificationUnit: mm4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Optimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)markingParameter Symbol Ratings Unit1 2 3Collector to base voltage VCBO 15 VCollector to emi

0.19. Size:42K panasonic
2sb1209 e.pdf pdf_icon

Transistor2SB1209Silicon PNP triple diffusion planer typeFor low-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High collector to base voltage VCBO.High collector to emitter voltage VCEO.Low collector to emitter saturation voltage VCE(sat).0.85Absolute Maximum Ratings (Ta=25C) 0.55 0.1 0.45 0.05Parameter Symbol Ratings Unit3 2 1

0.20. Size:38K panasonic
2sb1209.pdf pdf_icon

0.21. Size:36K panasonic
2sb1207.pdf pdf_icon

0.22. Size:261K utc
2sb1202.pdf pdf_icon

UNISONIC TECHNOLOGIES CO., LTD 2SB1202 PNP PLANAR TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SB1202 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Large current capacity and wide ASO * Low collector-to-emitter saturation voltage * Fast switching speed ORDERI

0.23. Size:218K lge
2sb1202.pdf pdf_icon

2SB1202(PNP)TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 FeaturesAdoption of FBET,MBIT processes Large current capacity and wide ASO Low collector-to-emitter saturation voltage Fast switching speed TO-252-2LMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector Base Voltage -60 V VCEO Collector

0.24. Size:932K kexin
2sb1204.pdf pdf_icon

SMD Type TransistorsPNP Transistors2SB1204TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 Features +0.80.50 -0.7 Low collector-to-emitter saturation voltage. High current and high fT Fast switching time.0.127+0.10.80-0.1max Complementary to 2SD1804+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolu

0.25. Size:821K kexin
2sb1202.pdf pdf_icon

SMD Type TransistorsPNP Transistors2SB1202TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO.0.127+0.10.80-0.1max Complementary to 2SD1802+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitt

0.26. Size:1261K kexin
2sb1205.pdf pdf_icon

SMD Type TransistorsPNP Transistors2SB1205TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector-to-emitter saturation voltage. High current and high fT0.127 Fast switching time.+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25

0.27. Size:1272K kexin
2sb1203.pdf pdf_icon

SMD Type TransistorsPNP Transistors2SB1203TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8 Features0.50 -0.7 Low collector-to-emitter saturation voltage. High current and high fT Fast switching speed0.127+0.10.80-0.1max Complementary to 2SD1803+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolu

0.28. Size:1558K kexin
2sb1201.pdf pdf_icon

SMD Type TransistorsPNP Transistors2SB1201TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO.0.127+0.10.80-0.1max Complementary to 2SD1801+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitt

0.29. Size:300K lzg
2sb1203 3ca1203.pdf pdf_icon

2SB1203(3CA1203) PNP /SILICON PNP TRANSISTOR Purpose: Relay drivers, high-speed inverters, general high-current switching applications. :f TFeatures: Low V , high current and high f ,

0.30. Size:261K lzg
2sb1204 3ca1204.pdf pdf_icon

2SB1204(3CA1204) PNP /SILICON PNP TRANSISTOR Purpose: Relay drivers, high-speed inverters, general high-current switching applications. :f TFeatures: Low V , high current and high f ,

0.31. Size:254K inchange semiconductor
2sb1204.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1204DESCRIPTIONHigh current and high fTLow collector-to-emitter saturation voltageExcellent linearity of hFEFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,high speed inverters,converters and othergeneral high-current swi

0.32. Size:252K inchange semiconductor
2sb1202.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1202DESCRIPTIONLarge current capacitance and wide ASOLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVoltage regulators,relay drivers,lamp drivers,electrical equipmentABSOLUTE MAXIMUM RATINGS(T =25

0.33. Size:253K inchange semiconductor
2sb1205.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1205DESCRIPTIONLarge current capacityLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobe,voltage regulations,relay drivers,lamp driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

0.34. Size:253K inchange semiconductor
2sb1203.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1203DESCRIPTIONHigh current and high fTLow collector-to-emitter saturation voltageExcellent linearity of hFEFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,High speed inverters,converters and othergeneral high-current swi

0.35. Size:253K inchange semiconductor
2sb1201.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1201DESCRIPTIONLarge current capacitance and wide ASOLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVoltage regulators,relay drivers,lamp drivers,electrical equipmentABSOLUTE MAXIMUM RATINGS(T =25

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .