2SB1204Q
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1204Q
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 8
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 130
MHz
Capacitancia de salida (Cc): 95
pF
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta:
TO218
Búsqueda de reemplazo de transistor bipolar 2SB1204Q
2SB1204Q
Datasheet (PDF)
7.2. Size:283K onsemi
2sb1204s-e 2sb1204s 2sb1204t-e 2sb1204t.pdf
Ordering number : EN2086C2SB1204Bipolar Transistorhttp://onsemi.com ( )50V, 8A, Low VCE sat , PNP Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE Fast switching s
7.3. Size:378K onsemi
2sb1204.pdf
Ordering number : EN2086C2SB1204Bipolar Transistorhttp://onsemi.com ( )50V, 8A, Low VCE sat , PNP Single TP/TP-FAApplications Relay drivers, high-speed inverters, converters, and other general high-current switching applicationsFeatures Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE Fast switching s
7.4. Size:932K kexin
2sb1204.pdf
SMD Type TransistorsPNP Transistors2SB1204TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 Features +0.80.50 -0.7 Low collector-to-emitter saturation voltage. High current and high fT Fast switching time.0.127+0.10.80-0.1max Complementary to 2SD1804+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolu
7.5. Size:261K lzg
2sb1204 3ca1204.pdf
2SB1204(3CA1204) PNP /SILICON PNP TRANSISTOR Purpose: Relay drivers, high-speed inverters, general high-current switching applications. :f TFeatures: Low V , high current and high f ,
7.6. Size:254K inchange semiconductor
2sb1204.pdf
isc Silicon PNP Power Transistor 2SB1204DESCRIPTIONHigh current and high fTLow collector-to-emitter saturation voltageExcellent linearity of hFEFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,high speed inverters,converters and othergeneral high-current swi
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