2SB1204Q Specs and Replacement
Type Designator: 2SB1204Q
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 130 MHz
Collector Capacitance (Cc): 95 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO218
2SB1204Q Substitution
- BJT ⓘ Cross-Reference Search
2SB1204Q datasheet
2sb1204s-e 2sb1204s 2sb1204t-e 2sb1204t.pdf ![]()
Ordering number EN2086C 2SB1204 Bipolar Transistor http //onsemi.com ( ) 50V, 8A, Low VCE sat , PNP Single TP/TP-FA Applications Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE Fast switching s... See More ⇒
Ordering number EN2086C 2SB1204 Bipolar Transistor http //onsemi.com ( ) 50V, 8A, Low VCE sat , PNP Single TP/TP-FA Applications Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE Fast switching s... See More ⇒
SMD Type Transistors PNP Transistors 2SB1204 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 Features +0.8 0.50 -0.7 Low collector-to-emitter saturation voltage. High current and high fT Fast switching time. 0.127 +0.1 0.80-0.1 max Complementary to 2SD1804 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolu... See More ⇒
Detailed specifications: 2SB1202T, 2SB1202U, 2SB1203, 2SB1203Q, 2SB1203R, 2SB1203S, 2SB1203T, 2SB1204, A940, 2SB1204R, 2SB1204S, 2SB1204T, 2SB1205, 2SB1205R, 2SB1205S, 2SB1205T, 2SB1206
Keywords - 2SB1204Q pdf specs
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