2N1500-18 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N1500-18
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.06 W
   Tensión colector-base (Vcb): 15 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 2 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 95 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO9

Búsqueda de reemplazo de transistor bipolar 2N1500-18

2N1500-18 Datasheet (PDF)

9.1. Size:175K ixys
ixtt12n150 ixth12n150.pdf

High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETIXTH12N150 RDS(on) 2.2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VG

9.2. Size:122K ixys
ixth12n150 ixtt12n150.pdf

High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETsIXTH12N150 RDS(on) 2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VGSM Transient

9.3. Size:142K ixys
ixtt12n150hv.pdf

High Voltage VDSS = 1500VIXTT12N150HVID25 = 12APower MOSFET RDS(on) 2.2 N-Channel Enhancement ModeFast Intrinsic DiodeTO-268HVGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VG = Gate D = DrainVGSS Continuous 30 V

9.4. Size:109K ixys
ixth2n150l.pdf

Advance Technical InformationLinearTM Power MOSFET VDSS = 1500VIXTH2N150LID25 = 2Aw/Extended FBSOA RDS(on) 15 N-Channel Enhancement ModeGuaranteed FBSOAAvalanche RatedTO-247GD (Tab)SSymbol Test Conditions Maximum RatingsG = Gate D = DrainVDSS TJ = 25C to 150C 1500 V S = Source Tab = DrainVDGR TJ = 25C to 150C

9.5. Size:140K ixys
ixth2n150.pdf

Advance Technical InformationHigh Voltage VDSS = 1500VIXTH2N150ID25 = 2APower MOSFET RDS(on) 9.2 N-Channel Enhancement ModeFast Intrinsic DiodeTO-247Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1500 VVDGR TJ = 25C to 150C, RGS = 1M 1500 VGDTabVGSS Continuous 30 VSVGSM Transient 40 VG

9.6. Size:1265K cn scilicon
sfp075n150c2 sfb072n150c2.pdf

SFP075N150C2,SFB072N150C2N-MOSFET 150V, 6.2m, 120AFeatures Product Summary Enhancement ModeVDS150V Very Low On-ResistanceRDS(on)6.2m Fast SwitchingID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested

9.7. Size:1216K cn scilicon
sfp075n150i2 sfb072n150i2.pdf

SFP075N150I2,SFB072N150I2N-MOSFET 150V, 6.2m, 120AFeatures Product Summary Enhancement ModeVDS150V Very Low On-ResistanceRDS(on)6.2m Fast SwitchingID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested

9.8. Size:1331K cn scilicon
sfw072n150c2.pdf

SFW072N150C2 N-MOSFET 150V, 6.0m, 140AFeatures Product Summary Enhancement Mode VDS150V Very Low On-Resistance RDS(on)6.0m Fast Switching ID 140A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche TestedBattery m

Otros transistores... 2N1496 , 2N1497 , 2N1499 , 2N1499A , 2N1499B , 2N149A , 2N150 , 2N1500 , 2SC2383Y , 2N1501 , 2N1502 , 2N1504 , 2N1504-10 , 2N1505 , 2N1506 , 2N1506A , 2N1507 .

Liste

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