2SB1220 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor2SB1220Silicon PNP epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SD18212.1 0.1 0.425 1.25 0.1 0.425High collector to emitter voltage VCEO.Low noise voltage NV.S-Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazine3packing.2Absolute

Transistor2SB1220Silicon PNP epitaxial planer typeFor high breakdown voltage low-noise amplificationUnit: mmComplementary to 2SD18212.1 0.1 0.425 1.25 0.1 0.425High collector to emitter voltage VCEO.Low noise voltage NV.S-Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazine3packing.2Absolute

SMD Type TransistorsPNP Transistors2SB1220 Features High collector to emitter voltage VCEO. Low noise voltage NV. Complementary to 2SD18211 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -150 Collector - Emitter Voltage VCEO -150 V Emitter - Base Voltage VEBO -5 Collector Curr

Transistor2SB1221Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SC39415.0 0.2 4.0 0.2Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 250 V+0.15 +0.150.45 0.1 0.45

Transistor2SB1221Silicon PNP epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SC39415.0 0.2 4.0 0.2Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 250 V+0.15 +0.150.45 0.1 0.45

JMnic Product Specification Silicon PNP Power Transistors 2SB1227 DESCRIPTION With TO-220F package Complement to type 2SD1829 High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-voltage regulators. PINNING

JMnic Product Specification Silicon PNP Power Transistors 2SB1225 DESCRIPTION With TO-220F package Complement to type 2SD1827 High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators. PINNIN

JMnic Product Specification Silicon PNP Power Transistors 2SB1226 DESCRIPTION With TO-220F package Complement to type 2SD1828 High DC current gain. Large current capacity and wide ASO. DARLINGTON APPLICATIONS Motor drivers,printer hammer drivers,relay drivers,voltage regulator control. PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (T

JMnic Product SpecificationSilicon PNP Power Transistors 2SB1228 DESCRIPTION With TO-220F package Complement to type 2SD1830 High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-voltage regulators. PINNING

JMnic Product Specification Silicon PNP Power Transistors 2SB1223 DESCRIPTION With TO-220F package Complement to type 2SD1825 High DC current gain. Large current capacity and wide ASO. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers,and constant-voltage regulators. PINNING PIN DESCRIPTION1 Base 2 CollectorF

isc Silicon PNP Darlington Power Transistor 2SB1227DESCRIPTIONHigh DC Current Gain-: h = 1500(Min)@ (V = -3V, I = -2.5A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SD1829Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in control of motor drivers, printerhammer drivers, and constant

isc Silicon PNP Darlington Power Transistor 2SB1225DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -5A)FE CE CLarge Current Capability and Wide ASO.Low collector-to-emitter saturation voltageComplement to Type 2SD1827Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in control of motor d

isc Silicon PNP Darlington Power Transistor 2SB1226DESCRIPTIONHigh DC Current Gain-: h = 1500(Min)@ (V = -3V, I = -1.5A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SD1828Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in control of motor drivers, printerhammer drivers, and constant

isc Silicon PNP Darlington Power Transistor 2SB1228DESCRIPTIONHigh DC Current Gain-: h = 1500(Min)@ (V = -3V, I = -4A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SD1830Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in control of motor drivers, printerhammer drivers, and constant-v

isc Silicon PNP Darlington Power Transistor 2SB1223DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -2A)FE CE CLarge Current Capability and Wide ASO.Complement to Type 2SD1825Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in control of motor drivers, printerhammer drivers, and constant-v