2SB1220 - описание и поиск аналогов

Transistor 2SB1220 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SD1821 2.1 0.1 0.425 1.25 0.1 0.425 High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute

Transistor 2SB1220 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SD1821 2.1 0.1 0.425 1.25 0.1 0.425 High collector to emitter voltage VCEO. Low noise voltage NV. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute

SMD Type Transistors PNP Transistors 2SB1220 Features High collector to emitter voltage VCEO. Low noise voltage NV. Complementary to 2SD1821 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -150 Collector - Emitter Voltage VCEO -150 V Emitter - Base Voltage VEBO -5 Collector Curr

Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SC3941 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 250 V +0.15 +0.15 0.45 0.1 0.45

Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Unit mm Complementary to 2SC3941 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 250 V +0.15 +0.15 0.45 0.1 0.45

JMnic Product Specification Silicon PNP Power Transistors 2SB1227 DESCRIPTION With TO-220F package Complement to type 2SD1829 High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-voltage regulators. PINNING

JMnic Product Specification Silicon PNP Power Transistors 2SB1225 DESCRIPTION With TO-220F package Complement to type 2SD1827 High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators. PINNIN

JMnic Product Specification Silicon PNP Power Transistors 2SB1226 DESCRIPTION With TO-220F package Complement to type 2SD1828 High DC current gain. Large current capacity and wide ASO. DARLINGTON APPLICATIONS Motor drivers,printer hammer drivers,relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (T

JMnic Product Specification Silicon PNP Power Transistors 2SB1228 DESCRIPTION With TO-220F package Complement to type 2SD1830 High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-voltage regulators. PINNING

JMnic Product Specification Silicon PNP Power Transistors 2SB1223 DESCRIPTION With TO-220F package Complement to type 2SD1825 High DC current gain. Large current capacity and wide ASO. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers,and constant-voltage regulators. PINNING PIN DESCRIPTION 1 Base 2 Collector F

isc Silicon PNP Darlington Power Transistor 2SB1227 DESCRIPTION High DC Current Gain- h = 1500(Min)@ (V = -3V, I = -2.5A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SD1829 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, and constant

isc Silicon PNP Darlington Power Transistor 2SB1225 DESCRIPTION High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -5A) FE CE C Large Current Capability and Wide ASO. Low collector-to-emitter saturation voltage Complement to Type 2SD1827 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor d

isc Silicon PNP Darlington Power Transistor 2SB1226 DESCRIPTION High DC Current Gain- h = 1500(Min)@ (V = -3V, I = -1.5A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SD1828 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, and constant

isc Silicon PNP Darlington Power Transistor 2SB1228 DESCRIPTION High DC Current Gain- h = 1500(Min)@ (V = -3V, I = -4A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SD1830 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, and constant-v

isc Silicon PNP Darlington Power Transistor 2SB1223 DESCRIPTION High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -2A) FE CE C Large Current Capability and Wide ASO. Complement to Type 2SD1825 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in control of motor drivers, printer hammer drivers, and constant-v