2N1505
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N1505
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 20
V
Tensión emisor-base (Veb): 3
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 70
MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta:
TO5
2N1505
Datasheet (PDF)
9.1. Size:175K ixys
ixtt12n150 ixth12n150.pdf
High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETIXTH12N150 RDS(on) 2.2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VG
9.2. Size:122K ixys
ixth12n150 ixtt12n150.pdf
High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETsIXTH12N150 RDS(on) 2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VGSM Transient
9.3. Size:142K ixys
ixtt12n150hv.pdf
High Voltage VDSS = 1500VIXTT12N150HVID25 = 12APower MOSFET RDS(on) 2.2 N-Channel Enhancement ModeFast Intrinsic DiodeTO-268HVGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VG = Gate D = DrainVGSS Continuous 30 V
9.4. Size:109K ixys
ixth2n150l.pdf
Advance Technical InformationLinearTM Power MOSFET VDSS = 1500VIXTH2N150LID25 = 2Aw/Extended FBSOA RDS(on) 15 N-Channel Enhancement ModeGuaranteed FBSOAAvalanche RatedTO-247GD (Tab)SSymbol Test Conditions Maximum RatingsG = Gate D = DrainVDSS TJ = 25C to 150C 1500 V S = Source Tab = DrainVDGR TJ = 25C to 150C
9.5. Size:140K ixys
ixth2n150.pdf
Advance Technical InformationHigh Voltage VDSS = 1500VIXTH2N150ID25 = 2APower MOSFET RDS(on) 9.2 N-Channel Enhancement ModeFast Intrinsic DiodeTO-247Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1500 VVDGR TJ = 25C to 150C, RGS = 1M 1500 VGDTabVGSS Continuous 30 VSVGSM Transient 40 VG
9.6. Size:1265K cn scilicon
sfp075n150c2 sfb072n150c2.pdf
SFP075N150C2,SFB072N150C2N-MOSFET 150V, 6.2m, 120AFeatures Product Summary Enhancement ModeVDS150V Very Low On-ResistanceRDS(on)6.2m Fast SwitchingID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested
9.7. Size:1216K cn scilicon
sfp075n150i2 sfb072n150i2.pdf
SFP075N150I2,SFB072N150I2N-MOSFET 150V, 6.2m, 120AFeatures Product Summary Enhancement ModeVDS150V Very Low On-ResistanceRDS(on)6.2m Fast SwitchingID 120A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested
9.8. Size:1331K cn scilicon
sfw072n150c2.pdf
SFW072N150C2 N-MOSFET 150V, 6.0m, 140AFeatures Product Summary Enhancement Mode VDS150V Very Low On-Resistance RDS(on)6.0m Fast Switching ID 140A100% DVDS TestedApplications100% Avalanche Tested Motor control and drive100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche TestedBattery m
Otros transistores... 2N149A
, 2N150
, 2N1500
, 2N1500-18
, 2N1501
, 2N1502
, 2N1504
, 2N1504-10
, 2SC2655
, 2N1506
, 2N1506A
, 2N1507
, 2N1508
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, 2N1510
, 2N1511
.