2N1506 Todos los transistores

 

2N1506 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N1506
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.8 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO5
     - Selección de transistores por parámetros

 

2N1506 Datasheet (PDF)

 9.1. Size:175K  ixys
 ixtt12n150 ixth12n150.pdf pdf_icon

2N1506

High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETIXTH12N150 RDS(on) 2.2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VG

 9.2. Size:122K  ixys
 ixth12n150 ixtt12n150.pdf pdf_icon

2N1506

High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETsIXTH12N150 RDS(on) 2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VGSM Transient

 9.3. Size:142K  ixys
 ixtt12n150hv.pdf pdf_icon

2N1506

High Voltage VDSS = 1500VIXTT12N150HVID25 = 12APower MOSFET RDS(on) 2.2 N-Channel Enhancement ModeFast Intrinsic DiodeTO-268HVGSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VG = Gate D = DrainVGSS Continuous 30 V

 9.4. Size:109K  ixys
 ixth2n150l.pdf pdf_icon

2N1506

Advance Technical InformationLinearTM Power MOSFET VDSS = 1500VIXTH2N150LID25 = 2Aw/Extended FBSOA RDS(on) 15 N-Channel Enhancement ModeGuaranteed FBSOAAvalanche RatedTO-247GD (Tab)SSymbol Test Conditions Maximum RatingsG = Gate D = DrainVDSS TJ = 25C to 150C 1500 V S = Source Tab = DrainVDGR TJ = 25C to 150C

MOSTRAR MÁS

Otros transistores... 2N150 , 2N1500 , 2N1500-18 , 2N1501 , 2N1502 , 2N1504 , 2N1504-10 , 2N1505 , 2SB817 , 2N1506A , 2N1507 , 2N1508 , 2N1509 , 2N150A , 2N1510 , 2N1511 , 2N1512 .

History: 3DG2413K | 2SA1706T-AN | BC848CW-G | 2SA795A | RT3YB7M | 2SA815

 

 
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