2SB1285 Todos los transistores

 ..1. Size:325K  shindengen
 2sb1285.pdf

SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1285 Case MTO-3P Unit mm (T15J10) -15A PNP RATINGS

 8.1. Size:63K  rohm
 2sb1287 1-2.pdf

 8.2. Size:37K  panasonic
 2sb1288.pdf

Transistor 2SB1288 Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm For DC-DC converter 5.0 0.2 4.0 0.2 For stroboscope Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.7 0.1 Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) +0.15 +0.15 0.45 0.1 0.45 0.1 Parameter Sy

 8.3. Size:41K  panasonic
 2sb1288 e.pdf

Transistor 2SB1288 Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm For DC-DC converter 5.0 0.2 4.0 0.2 For stroboscope Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. 0.7 0.1 Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) +0.15 +0.15 0.45 0.1 0.45 0.1 Parameter Sy

 8.4. Size:281K  shindengen
 2sb1283.pdf

SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1283 Case ITO-220 Unit mm (TP7J10) A PNP RATINGS

 8.5. Size:321K  shindengen
 2sb1282.pdf

SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1282 Case ITO-220 Unit mm (TP4J10) 4A PNP RATINGS

 8.6. Size:321K  shindengen
 2sb1284.pdf

SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SB1284 Case ITO-220 Unit mm (TP10J10) A PNP RATINGS

 8.7. Size:208K  inchange semiconductor
 2sb1283.pdf

isc Silicon PNP Darlingtion Power Transistor 2SB1283 DESCRIPTION High DC Current Gain- h = 1500(Min.)@I = -3A FE C Low Collector Saturation Voltage- V = -1.5V(Max)@I = -3A CE(sat) C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications. Hammer drive, pulse motor drive

 8.8. Size:215K  inchange semiconductor
 2sb1287.pdf

isc Silicon PNP Darlington Power Transistor 2SB1287 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -1A FE C Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage V = -1.5V(Max)@ I = -1A CE(sat) C Complement to Type 2SD1765 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

 8.9. Size:209K  inchange semiconductor
 2sb1284.pdf

isc Silicon PNP Darlingtion Power Transistor 2SB1284 DESCRIPTION High DC Current Gain- h = 1500(Min.)@I = -5A FE C Low Collector Saturation Voltage- V = -1.5V(Max)@I = -5A CE(sat) C Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications. Hammer drive, pulse motor drive

 8.10. Size:217K  inchange semiconductor
 2sb1289.pdf

isc Silicon PNP Power Transistor 2SB1289 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -1.0V(Max)@I = -4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1580 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE

 8.11. Size:214K  inchange semiconductor
 2sb1286.pdf

isc Silicon PNP Darlington Power Transistor 2SB1286 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -1A FE C Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage V = -1.5V(Max)@ I = -1A CE(sat) C Complement to Type 2SD1646 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION