2SB1285
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1285
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 100
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 15
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 25
MHz
Ganancia de corriente contínua (hfe): 2000
Paquete / Cubierta:
TO126
Búsqueda de reemplazo de transistor bipolar 2SB1285
2SB1285
Datasheet (PDF)
..1. Size:325K shindengen
2sb1285.pdf 
SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1285 Case : MTO-3PUnit : mm(T15J10)-15A PNPRATINGS
8.2. Size:37K panasonic
2sb1288.pdf
Transistor2SB1288Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmFor DC-DC converter5.0 0.2 4.0 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.0.7 0.1Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)+0.15 +0.150.45 0.1 0.45 0.1Parameter Sy
8.3. Size:41K panasonic
2sb1288 e.pdf
Transistor2SB1288Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmFor DC-DC converter5.0 0.2 4.0 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.0.7 0.1Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)+0.15 +0.150.45 0.1 0.45 0.1Parameter Sy
8.4. Size:281K shindengen
2sb1283.pdf
SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1283 Case : ITO-220Unit : mm(TP7J10)A PNPRATINGS
8.5. Size:321K shindengen
2sb1282.pdf
SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1282 Case : ITO-220Unit : mm(TP4J10)4A PNPRATINGS
8.6. Size:321K shindengen
2sb1284.pdf
SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1284 Case : ITO-220Unit : mm(TP10J10)A PNPRATINGS
8.7. Size:208K inchange semiconductor
2sb1283.pdf
isc Silicon PNP Darlingtion Power Transistor 2SB1283DESCRIPTIONHigh DC Current Gain-: h = 1500(Min.)@I = -3AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -3ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, pulse motor drive
8.8. Size:215K inchange semiconductor
2sb1287.pdf
isc Silicon PNP Darlington Power Transistor 2SB1287DESCRIPTIONHigh DC Current Gain-:h = 1000(Min)@ I = -1AFE CCollector-Emitter Breakdown Voltage-:V = -100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage:V = -1.5V(Max)@ I = -1ACE(sat) CComplement to Type 2SD1765Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION
8.9. Size:209K inchange semiconductor
2sb1284.pdf
isc Silicon PNP Darlingtion Power Transistor 2SB1284DESCRIPTIONHigh DC Current Gain-: h = 1500(Min.)@I = -5AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, pulse motor drive
8.10. Size:217K inchange semiconductor
2sb1289.pdf
isc Silicon PNP Power Transistor 2SB1289DESCRIPTIONHigh Collector Current:: I = -7ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -4ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1580Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE
8.11. Size:214K inchange semiconductor
2sb1286.pdf
isc Silicon PNP Darlington Power Transistor 2SB1286DESCRIPTIONHigh DC Current Gain-:h = 1000(Min)@ I = -1AFE CCollector-Emitter Breakdown Voltage-:V = -100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage:V = -1.5V(Max)@ I = -1ACE(sat) CComplement to Type 2SD1646Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION
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