Справочник транзисторов. 2SB1285

 

Биполярный транзистор 2SB1285 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SB1285
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 100 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 15 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 25 MHz
   Статический коэффициент передачи тока (hfe): 2000
   Корпус транзистора: TO126

 Аналоги (замена) для 2SB1285

 

 

2SB1285 Datasheet (PDF)

 ..1. Size:325K  shindengen
2sb1285.pdf

2SB1285
2SB1285

SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1285 Case : MTO-3PUnit : mm(T15J10)-15A PNPRATINGS

 8.1. Size:63K  rohm
2sb1287 1-2.pdf

2SB1285
2SB1285

 8.2. Size:37K  panasonic
2sb1288.pdf

2SB1285
2SB1285

Transistor2SB1288Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmFor DC-DC converter5.0 0.2 4.0 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.0.7 0.1Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)+0.15 +0.150.45 0.1 0.45 0.1Parameter Sy

 8.3. Size:41K  panasonic
2sb1288 e.pdf

2SB1285
2SB1285

Transistor2SB1288Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmFor DC-DC converter5.0 0.2 4.0 0.2For stroboscopeFeaturesLow collector to emitter saturation voltage VCE(sat).Large collector current IC.0.7 0.1Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)+0.15 +0.150.45 0.1 0.45 0.1Parameter Sy

 8.4. Size:281K  shindengen
2sb1283.pdf

2SB1285
2SB1285

SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1283 Case : ITO-220Unit : mm(TP7J10)A PNPRATINGS

 8.5. Size:321K  shindengen
2sb1282.pdf

2SB1285
2SB1285

SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1282 Case : ITO-220Unit : mm(TP4J10)4A PNPRATINGS

 8.6. Size:321K  shindengen
2sb1284.pdf

2SB1285
2SB1285

SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SB1284 Case : ITO-220Unit : mm(TP10J10)A PNPRATINGS

 8.7. Size:208K  inchange semiconductor
2sb1283.pdf

2SB1285
2SB1285

isc Silicon PNP Darlingtion Power Transistor 2SB1283DESCRIPTIONHigh DC Current Gain-: h = 1500(Min.)@I = -3AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -3ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, pulse motor drive

 8.8. Size:215K  inchange semiconductor
2sb1287.pdf

2SB1285
2SB1285

isc Silicon PNP Darlington Power Transistor 2SB1287DESCRIPTIONHigh DC Current Gain-:h = 1000(Min)@ I = -1AFE CCollector-Emitter Breakdown Voltage-:V = -100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage:V = -1.5V(Max)@ I = -1ACE(sat) CComplement to Type 2SD1765Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION

 8.9. Size:209K  inchange semiconductor
2sb1284.pdf

2SB1285
2SB1285

isc Silicon PNP Darlingtion Power Transistor 2SB1284DESCRIPTIONHigh DC Current Gain-: h = 1500(Min.)@I = -5AFE CLow Collector Saturation Voltage-: V = -1.5V(Max)@I = -5ACE(sat) CGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applications.Hammer drive, pulse motor drive

 8.10. Size:217K  inchange semiconductor
2sb1289.pdf

2SB1285
2SB1285

isc Silicon PNP Power Transistor 2SB1289DESCRIPTIONHigh Collector Current:: I = -7ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -4ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1580Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

 8.11. Size:214K  inchange semiconductor
2sb1286.pdf

2SB1285
2SB1285

isc Silicon PNP Darlington Power Transistor 2SB1286DESCRIPTIONHigh DC Current Gain-:h = 1000(Min)@ I = -1AFE CCollector-Emitter Breakdown Voltage-:V = -100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage:V = -1.5V(Max)@ I = -1ACE(sat) CComplement to Type 2SD1646Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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