2SB129 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SB129
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 40 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 90 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 0.06 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO3

Búsqueda de reemplazo de 2SB129

- Selección ⓘ de transistores por parámetros

2SB129 Datasheet (PDF)

0.1. Size:122K sanyo
2sb1296.pdf pdf_icon

0.2. Size:114K sanyo
2sb1295.pdf pdf_icon

0.3. Size:39K rohm
2sb1292.pdf pdf_icon

2SB1292TransistorsTransistors2SB1832(94L-316-B75)(94L-872-D75)286

0.4. Size:38K rohm
2sb1290.pdf pdf_icon

2SB1290TransistorsTransistors2SD1833(96-630-B55)(96-741-D55)285

0.5. Size:57K rohm
2sb1290 1-2.pdf pdf_icon

0.6. Size:154K rohm
2sb1294.pdf pdf_icon

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

0.7. Size:58K rohm
2sb1292 1-2.pdf pdf_icon

0.8. Size:41K panasonic
2sb1297 e.pdf pdf_icon

Transistor2SB1297Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD19375.0 0.2 4.0 0.2FeaturesExtremely satisfactory linearity of the forward current transferratio hFE.High transition frequency fT.Makes up a complementary pair with 2SD1937, which is opti-0.7 0.1mum for the pre-driver stage of a 40 to 60W output amp

0.9. Size:37K panasonic
2sb1297.pdf pdf_icon

0.10. Size:53K panasonic
2sb1299.pdf pdf_icon

Power Transistors2SB1299Silicon PNP epitaxial planar typeFor power amplificationUnit: mmComplementary to 2SD127310.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh foward current transfer ratio hFE 3.1 0.1Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1Absolute

0.11. Size:1395K kexin
2sb1295.pdf pdf_icon

SMD Type TransistorsPNP Transistors2SB1295SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Large current capacity. Low collector to emitter saturation voltage.1 2 Complimentary to 2SD1935.+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - B

0.12. Size:217K inchange semiconductor
2sb1293.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1293DESCRIPTIONHigh Collector Current:: I = -5ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1896Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

0.13. Size:217K inchange semiconductor
2sb1292.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1292DESCRIPTIONHigh Collector Current:: I = -5ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1832Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

0.14. Size:219K inchange semiconductor
2sb1290.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1290DESCRIPTIONHigh Collector Current:: I = -7ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -4ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1833Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

0.15. Size:218K inchange semiconductor
2sb1294.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1294DESCRIPTIONHigh Collector Current:: I = -5ACLow Collector Saturation Voltage: V = -1.0V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1897Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

0.16. Size:216K inchange semiconductor
2sb1291.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1291DESCRIPTIONHigh Collector Current: I = -5ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1720Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .