2SB129. Аналоги и основные параметры
Наименование производителя: 2SB129
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 40 V
Макcимальный постоянный ток коллектора (Ic): 6 A
Предельная температура PN-перехода (Tj): 90 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 0.06 MHz
Статический коэффициент передачи тока (hFE): 30
Корпус транзистора: TO3
Аналоги (замена) для 2SB129
- подборⓘ биполярного транзистора по параметрам
2SB129 даташит
0.3. Size:39K rohm
2sb1292.pdf 
2SB1292 Transistors Transistors 2SB1832 (94L-316-B75) (94L-872-D75) 286
0.4. Size:38K rohm
2sb1290.pdf 
2SB1290 Transistors Transistors 2SD1833 (96-630-B55) (96-741-D55) 285
0.6. Size:154K rohm
2sb1294.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
0.8. Size:41K panasonic
2sb1297 e.pdf 
Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD1937 5.0 0.2 4.0 0.2 Features Extremely satisfactory linearity of the forward current transfer ratio hFE. High transition frequency fT. Makes up a complementary pair with 2SD1937, which is opti- 0.7 0.1 mum for the pre-driver stage of a 40 to 60W output amp
0.9. Size:37K panasonic
2sb1297.pdf 
Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD1937 5.0 0.2 4.0 0.2 Features Extremely satisfactory linearity of the forward current transfer ratio hFE. High transition frequency fT. Makes up a complementary pair with 2SD1937, which is opti- 0.7 0.1 mum for the pre-driver stage of a 40 to 60W output amp
0.10. Size:53K panasonic
2sb1299.pdf 
Power Transistors 2SB1299 Silicon PNP epitaxial planar type For power amplification Unit mm Complementary to 2SD1273 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High foward current transfer ratio hFE 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute
0.11. Size:1395K kexin
2sb1295.pdf 
SMD Type Transistors PNP Transistors 2SB1295 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Large current capacity. Low collector to emitter saturation voltage. 1 2 Complimentary to 2SD1935. +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - B
0.12. Size:217K inchange semiconductor
2sb1293.pdf 
isc Silicon PNP Power Transistor 2SB1293 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -1.0V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1896 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE
0.13. Size:217K inchange semiconductor
2sb1292.pdf 
isc Silicon PNP Power Transistor 2SB1292 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1832 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE
0.14. Size:219K inchange semiconductor
2sb1290.pdf 
isc Silicon PNP Power Transistor 2SB1290 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -1.0V(Max)@I = -4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1833 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE
0.15. Size:218K inchange semiconductor
2sb1294.pdf 
isc Silicon PNP Power Transistor 2SB1294 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -1.0V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1897 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE
0.16. Size:216K inchange semiconductor
2sb1291.pdf 
isc Silicon PNP Power Transistor 2SB1291 DESCRIPTION High Collector Current I = -5A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1720 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE
Другие транзисторы: 2SB1283, 2SB1284, 2SB1285, 2SB1286, 2SB1287, 2SB1288, 2SB1289, 2SB128A, 2SC828, 2SB1290, 2SB1291, 2SB1292, 2SB1293, 2SB1294, 2SB1295, 2SB1295-5, 2SB1295-6
