2SB134 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SB134
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 15 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 85 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 0.3 MHz
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: TO1

Búsqueda de reemplazo de 2SB134

- Selección ⓘ de transistores por parámetros

2SB134 Datasheet (PDF)

0.1. Size:39K rohm
2sb1342.pdf pdf_icon

2SB1474 / 2SB1342TransistorsTransistors2SD1933(94S-181-B400)(94L-906-D400)298

0.2. Size:38K rohm
2sb1344.pdf pdf_icon

2SB1344TransistorsTransistors2SD2025(94L-374-B403)(94L-969-D403)299

0.3. Size:58K rohm
2sb1340 1-2.pdf pdf_icon

0.4. Size:38K rohm
2sb1340.pdf pdf_icon

2SB1340TransistorsTransistors2SD1889(96-650-B88)(96-765-D88)288

0.5. Size:53K panasonic
2sb1347.pdf pdf_icon

Power Transistors2SB1347Silicon PNP triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SD2029 3.3 0.220.0 0.5 5.0 0.33.0FeaturesSatisfactory foward current transfer ratio hFE vs. collector cur-rent IC characteristicsWide area of safe operation (ASO) 1.5High transition frequency fTOptimum for the output stage of a HiFi audio am

0.6. Size:217K inchange semiconductor
2sb1346.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1346DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD2027Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency and general purposeamplifier applications.ABSOLUTE MAX

0.7. Size:219K inchange semiconductor
2sb1347.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1347DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD2029Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsOptimum for the output stage of a HiFi audio amplifierABSOLUTE MAXIMUM RATING

0.8. Size:215K inchange semiconductor
2sb1342.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor 2SB1342DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD1933Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM

0.9. Size:214K inchange semiconductor
2sb1344.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor 2SB1344DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD2025Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM

0.10. Size:213K inchange semiconductor
2sb1341.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor 2SB1341DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

0.11. Size:213K inchange semiconductor
2sb1343.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor 2SB1343DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

0.12. Size:214K inchange semiconductor
2sb1340.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor 2SB1340DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD1889APPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -120 VCB

0.13. Size:218K inchange semiconductor
2sb1345.pdf pdf_icon

isc Silicon PNP Power Transistor 2SB1345DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -5ACE(sat) CGood Linearity of hFEComplement to Type 2SD2062With TO-3PN packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower driver and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

Otros transistores... 2SB1327 , 2SB132A , 2SB133 , 2SB1334 , 2SB1335 , 2SB1337 , 2SB1338 , 2SB1339 , 9014 , 2SB1340 , 2SB1341 , 2SB1342 , 2SB1343 , 2SB1344 , 2SB1345 , 2SB1346 , 2SB1347 .