2SB134. Аналоги и основные параметры
Наименование производителя: 2SB134
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 15 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 85 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 0.3 MHz
Статический коэффициент передачи тока (hFE): 70
Корпус транзистора: TO1
Аналоги (замена) для 2SB134
- подборⓘ биполярного транзистора по параметрам
2SB134 даташит
0.1. Size:39K rohm
2sb1342.pdf 
2SB1474 / 2SB1342 Transistors Transistors 2SD1933 (94S-181-B400) (94L-906-D400) 298
0.2. Size:38K rohm
2sb1344.pdf 
2SB1344 Transistors Transistors 2SD2025 (94L-374-B403) (94L-969-D403) 299
0.4. Size:38K rohm
2sb1340.pdf 
2SB1340 Transistors Transistors 2SD1889 (96-650-B88) (96-765-D88) 288
0.5. Size:53K panasonic
2sb1347.pdf 
Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Unit mm Complementary to 2SD2029 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features Satisfactory foward current transfer ratio hFE vs. collector cur- rent IC characteristics Wide area of safe operation (ASO) 1.5 High transition frequency fT Optimum for the output stage of a HiFi audio am
0.6. Size:217K inchange semiconductor
2sb1346.pdf 
isc Silicon PNP Power Transistor 2SB1346 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD2027 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAX
0.7. Size:219K inchange semiconductor
2sb1347.pdf 
isc Silicon PNP Power Transistor 2SB1347 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD2029 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATING
0.8. Size:215K inchange semiconductor
2sb1342.pdf 
isc Silicon PNP Darlington Power Transistor 2SB1342 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Complement to Type 2SD1933 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM
0.9. Size:214K inchange semiconductor
2sb1344.pdf 
isc Silicon PNP Darlington Power Transistor 2SB1344 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Complement to Type 2SD2025 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM
0.10. Size:213K inchange semiconductor
2sb1341.pdf 
isc Silicon PNP Darlington Power Transistor 2SB1341 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P
0.11. Size:213K inchange semiconductor
2sb1343.pdf 
isc Silicon PNP Darlington Power Transistor 2SB1343 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
0.12. Size:214K inchange semiconductor
2sb1340.pdf 
isc Silicon PNP Darlington Power Transistor 2SB1340 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = -3V, I = -2A) FE CE C Complement to Type 2SD1889 APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -120 V CB
0.13. Size:218K inchange semiconductor
2sb1345.pdf 
isc Silicon PNP Power Transistor 2SB1345 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -5A CE(sat) C Good Linearity of h FE Complement to Type 2SD2062 With TO-3PN package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power driver and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
Другие транзисторы: 2SB1327, 2SB132A, 2SB133, 2SB1334, 2SB1335, 2SB1337, 2SB1338, 2SB1339, BC558, 2SB1340, 2SB1341, 2SB1342, 2SB1343, 2SB1344, 2SB1345, 2SB1346, 2SB1347
