2SB1345 Todos los transistores

 

2SB1345 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB1345
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 80 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 160
   Paquete / Cubierta: TO126

 Búsqueda de reemplazo de transistor bipolar 2SB1345

 

2SB1345 Datasheet (PDF)

 ..1. Size:218K  inchange semiconductor
2sb1345.pdf

2SB1345
2SB1345

isc Silicon PNP Power Transistor 2SB1345DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -5ACE(sat) CGood Linearity of hFEComplement to Type 2SD2062With TO-3PN packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower driver and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)a

 8.1. Size:39K  rohm
2sb1342.pdf

2SB1345

2SB1474 / 2SB1342TransistorsTransistors2SD1933(94S-181-B400)(94L-906-D400)298

 8.2. Size:38K  rohm
2sb1344.pdf

2SB1345

2SB1344TransistorsTransistors2SD2025(94L-374-B403)(94L-969-D403)299

 8.3. Size:58K  rohm
2sb1340 1-2.pdf

2SB1345
2SB1345

 8.4. Size:38K  rohm
2sb1340.pdf

2SB1345

2SB1340TransistorsTransistors2SD1889(96-650-B88)(96-765-D88)288

 8.5. Size:53K  panasonic
2sb1347.pdf

2SB1345
2SB1345

Power Transistors2SB1347Silicon PNP triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SD2029 3.3 0.220.0 0.5 5.0 0.33.0FeaturesSatisfactory foward current transfer ratio hFE vs. collector cur-rent IC characteristicsWide area of safe operation (ASO) 1.5High transition frequency fTOptimum for the output stage of a HiFi audio am

 8.6. Size:217K  inchange semiconductor
2sb1346.pdf

2SB1345
2SB1345

isc Silicon PNP Power Transistor 2SB1346DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD2027Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency and general purposeamplifier applications.ABSOLUTE MAX

 8.7. Size:219K  inchange semiconductor
2sb1347.pdf

2SB1345
2SB1345

isc Silicon PNP Power Transistor 2SB1347DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD2029Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsOptimum for the output stage of a HiFi audio amplifierABSOLUTE MAXIMUM RATING

 8.8. Size:215K  inchange semiconductor
2sb1342.pdf

2SB1345
2SB1345

isc Silicon PNP Darlington Power Transistor 2SB1342DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD1933Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM

 8.9. Size:214K  inchange semiconductor
2sb1344.pdf

2SB1345
2SB1345

isc Silicon PNP Darlington Power Transistor 2SB1344DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD2025Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM

 8.10. Size:213K  inchange semiconductor
2sb1341.pdf

2SB1345
2SB1345

isc Silicon PNP Darlington Power Transistor 2SB1341DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

 8.11. Size:213K  inchange semiconductor
2sb1343.pdf

2SB1345
2SB1345

isc Silicon PNP Darlington Power Transistor 2SB1343DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

 8.12. Size:214K  inchange semiconductor
2sb1340.pdf

2SB1345
2SB1345

isc Silicon PNP Darlington Power Transistor 2SB1340DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD1889APPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -120 VCB

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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