2SB1345 Specs and Replacement
Type Designator: 2SB1345
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: TO126
- BJT ⓘ Cross-Reference Search
2SB1345 datasheet
..1. Size:218K inchange semiconductor
2sb1345.pdf 
isc Silicon PNP Power Transistor 2SB1345 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -5A CE(sat) C Good Linearity of h FE Complement to Type 2SD2062 With TO-3PN package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power driver and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒
8.1. Size:39K rohm
2sb1342.pdf
2SB1474 / 2SB1342 Transistors Transistors 2SD1933 (94S-181-B400) (94L-906-D400) 298 ... See More ⇒
8.2. Size:38K rohm
2sb1344.pdf
2SB1344 Transistors Transistors 2SD2025 (94L-374-B403) (94L-969-D403) 299 ... See More ⇒
8.4. Size:38K rohm
2sb1340.pdf
2SB1340 Transistors Transistors 2SD1889 (96-650-B88) (96-765-D88) 288 ... See More ⇒
8.5. Size:53K panasonic
2sb1347.pdf
Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Unit mm Complementary to 2SD2029 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features Satisfactory foward current transfer ratio hFE vs. collector cur- rent IC characteristics Wide area of safe operation (ASO) 1.5 High transition frequency fT Optimum for the output stage of a HiFi audio am... See More ⇒
8.6. Size:217K inchange semiconductor
2sb1346.pdf
isc Silicon PNP Power Transistor 2SB1346 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD2027 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAX... See More ⇒
8.7. Size:219K inchange semiconductor
2sb1347.pdf
isc Silicon PNP Power Transistor 2SB1347 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD2029 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATING... See More ⇒
8.8. Size:215K inchange semiconductor
2sb1342.pdf
isc Silicon PNP Darlington Power Transistor 2SB1342 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Complement to Type 2SD1933 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM ... See More ⇒
8.9. Size:214K inchange semiconductor
2sb1344.pdf
isc Silicon PNP Darlington Power Transistor 2SB1344 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Complement to Type 2SD2025 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM... See More ⇒
8.10. Size:213K inchange semiconductor
2sb1341.pdf
isc Silicon PNP Darlington Power Transistor 2SB1341 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
8.11. Size:213K inchange semiconductor
2sb1343.pdf
isc Silicon PNP Darlington Power Transistor 2SB1343 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ... See More ⇒
8.12. Size:214K inchange semiconductor
2sb1340.pdf
isc Silicon PNP Darlington Power Transistor 2SB1340 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = -3V, I = -2A) FE CE C Complement to Type 2SD1889 APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -120 V CB... See More ⇒
Detailed specifications: 2SB1338, 2SB1339, 2SB134, 2SB1340, 2SB1341, 2SB1342, 2SB1343, 2SB1344, SS8050, 2SB1346, 2SB1347, 2SB1348, 2SB1349, 2SB135, 2SB1351, 2SB1352, 2SB1353
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