2SB1345 Datasheet and Replacement
Type Designator: 2SB1345
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 80
W
Maximum Collector-Base Voltage |Vcb|: 100
V
Maximum Collector-Emitter Voltage |Vce|: 100
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 7
A
Max. Operating Junction Temperature (Tj): 175
°C
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package:
TO126
-
BJT ⓘ Cross-Reference Search
2SB1345 Datasheet (PDF)
..1. Size:218K inchange semiconductor
2sb1345.pdf 
isc Silicon PNP Power Transistor 2SB1345DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -5ACE(sat) CGood Linearity of hFEComplement to Type 2SD2062With TO-3PN packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower driver and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
8.1. Size:39K rohm
2sb1342.pdf
2SB1474 / 2SB1342TransistorsTransistors2SD1933(94S-181-B400)(94L-906-D400)298
8.2. Size:38K rohm
2sb1344.pdf
2SB1344TransistorsTransistors2SD2025(94L-374-B403)(94L-969-D403)299
8.4. Size:38K rohm
2sb1340.pdf
2SB1340TransistorsTransistors2SD1889(96-650-B88)(96-765-D88)288
8.5. Size:53K panasonic
2sb1347.pdf
Power Transistors2SB1347Silicon PNP triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SD2029 3.3 0.220.0 0.5 5.0 0.33.0FeaturesSatisfactory foward current transfer ratio hFE vs. collector cur-rent IC characteristicsWide area of safe operation (ASO) 1.5High transition frequency fTOptimum for the output stage of a HiFi audio am
8.6. Size:217K inchange semiconductor
2sb1346.pdf
isc Silicon PNP Power Transistor 2SB1346DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD2027Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency and general purposeamplifier applications.ABSOLUTE MAX
8.7. Size:219K inchange semiconductor
2sb1347.pdf
isc Silicon PNP Power Transistor 2SB1347DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD2029Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsOptimum for the output stage of a HiFi audio amplifierABSOLUTE MAXIMUM RATING
8.8. Size:215K inchange semiconductor
2sb1342.pdf
isc Silicon PNP Darlington Power Transistor 2SB1342DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD1933Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM
8.9. Size:214K inchange semiconductor
2sb1344.pdf
isc Silicon PNP Darlington Power Transistor 2SB1344DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD2025Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM
8.10. Size:213K inchange semiconductor
2sb1341.pdf
isc Silicon PNP Darlington Power Transistor 2SB1341DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P
8.11. Size:213K inchange semiconductor
2sb1343.pdf
isc Silicon PNP Darlington Power Transistor 2SB1343DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
8.12. Size:214K inchange semiconductor
2sb1340.pdf
isc Silicon PNP Darlington Power Transistor 2SB1340DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD1889APPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -120 VCB
Datasheet: 2SB1338
, 2SB1339
, 2SB134
, 2SB1340
, 2SB1341
, 2SB1342
, 2SB1343
, 2SB1344
, A1013
, 2SB1346
, 2SB1347
, 2SB1348
, 2SB1349
, 2SB135
, 2SB1351
, 2SB1352
, 2SB1353
.
Keywords - 2SB1345 transistor datasheet
2SB1345 cross reference
2SB1345 equivalent finder
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