2SB1370 Todos los transistores

 ..1. Size:39K  rohm
 2sb1370.pdf

2SB1370 Transistors Transistors 2SB1655 / 2SB1565 (94L-411-B303) (94L-456-B349) 319

 ..2. Size:208K  lge
 2sb1370.pdf

2SB1370(PNP) TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 3. EMITTE 1 2 3 Features Breakdown Voltage High Reverse Cut-off Current Small Saturation Voltage Low Collector Power dissipation PCM 2 W (Tamb=25 ) 30 W (Tcase=25 ) Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

 ..3. Size:209K  inchange semiconductor
 2sb1370.pdf

isc Silicon PNP Power Transistor 2SB1370 DESCRIPTION Low Collector Saturation Voltage- V = -0.3V(Typ.)@I = -2A CE(sat) C Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 8.1. Size:181K  toshiba
 2sb1375.pdf

 8.2. Size:39K  panasonic
 2sb1378.pdf

Transistor 2SB1378 Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SD1996 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converters. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 Absolute Maximum R

 8.3. Size:53K  panasonic
 2sb1377 e.pdf

Transistor 2SB1377 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SD2071 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Allowing supply with the radial taping. 0.65 max. Absolute Maximum Ratings (Ta=25 C) +0.1 0.45 0.05 Parameter Symbol Ratings Unit 2.5 0.5 2.5 0.5 Collector to b

 8.4. Size:44K  panasonic
 2sb1378 e.pdf

Transistor 2SB1378 Silicon PNP epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SD1996 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converters. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 Absolute Maximum R

 8.5. Size:51K  panasonic
 2sb1371.pdf

Power Transistors 2SB1371 Silicon PNP triple diffusion planar type For high power amplification Unit mm Complementary to 2SD2064 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 Satisfactory foward current transfer ratio hFE vs. collector cur- rent IC characteristics 3.2 0.1 Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed t

 8.6. Size:195K  jmnic
 2sb1375.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1375 DESCRIPTION With TO-220F package Complement to type 2SD2012 Low collector saturation voltage VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A Collector power dissipation PC=25W(TC=25 ) APPLICATIONS Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (

 8.7. Size:186K  jmnic
 2sb1371.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1371 DESCRIPTION With TO-3PFa package Complement to type 2SD2064 High transition frequency Satisfactory linearity of hFE APPLICATIONS For high power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO C

 8.8. Size:241K  lge
 2sb1375.pdf

2SB1375(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features High Power Dissipation PC=25W(TC=25 ) Low voltage VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) Collector metal(Fin)is Coverd with Mold Regin Complementary to 2SD2012 MAXIMUM RATINGS (TA=25 unless otherwise noted ) Dimensions in inches and (millimeters) Symbol Parameter

 8.9. Size:198K  inchange semiconductor
 2sb1372.pdf

isc Silicon PNP Power Transistor 2SB1372 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD2065 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 8.10. Size:211K  inchange semiconductor
 2sb1375.pdf

isc Silicon PNP Power Transistor 2SB1375 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -2A, I = -0.2A) CE(sat) C B Complement to Type 2SD2012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI

 8.11. Size:222K  inchange semiconductor
 2sb1371.pdf

isc Silicon PNP Power Transistor 2SB1371 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SD2064 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 8.12. Size:204K  inchange semiconductor
 2sb1373.pdf

isc Silicon PNP Power Transistor 2SB1373 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD2066 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V