2SB1370 Datasheet and Replacement

2SB1370TransistorsTransistors2SB1655 / 2SB1565(94L-411-B303)(94L-456-B349)319

2SB1370(PNP)TO-220F Bipolar TransistorsTO-220F1. BASE 2. COLLECTOR 3. EMITTE 1 2 3Features Breakdown Voltage High Reverse Cut-off Current Small Saturation Voltage Low Collector Power dissipation PCM : 2 W (Tamb=25) 30 W (Tcase=25) Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

isc Silicon PNP Power Transistor 2SB1370DESCRIPTIONLow Collector Saturation Voltage-: V = -0.3V(Typ.)@I = -2ACE(sat) CGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

Transistor2SB1378Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmComplementary to 2SD19966.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesLow collector to emitter saturation voltage VCE(sat).Optimum for low-voltage operation and for converters.0.65 max.Allowing supply with the radial taping.+0.1 0.450.05Absolute Maximum R

Transistor2SB1377Silicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SD20712.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesAllowing supply with the radial taping.0.65 max.Absolute Maximum Ratings (Ta=25C)+0.1 0.450.05Parameter Symbol Ratings Unit2.5 0.5 2.5 0.5Collector to b

Transistor2SB1378Silicon PNP epitaxial planer typeFor low-frequency power amplificationUnit: mmComplementary to 2SD19966.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesLow collector to emitter saturation voltage VCE(sat).Optimum for low-voltage operation and for converters.0.65 max.Allowing supply with the radial taping.+0.1 0.450.05Absolute Maximum R

Power Transistors2SB1371Silicon PNP triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SD206415.0 0.3 5.0 0.2Features11.0 0.2 3.2Satisfactory foward current transfer ratio hFE vs. collector cur-rent IC characteristics 3.2 0.1Wide area of safe operation (ASO)High transition frequency fTFull-pack package which can be installed t

JMnic Product Specification Silicon PNP Power Transistors 2SB1375 DESCRIPTION With TO-220F package Complement to type 2SD2012 Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A Collector power dissipation: PC=25W(TC=25) APPLICATIONS Audio frequency power amplifier PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (

JMnic Product Specification Silicon PNP Power Transistors 2SB1371 DESCRIPTION With TO-3PFa package Complement to type 2SD2064 High transition frequency Satisfactory linearity of hFE APPLICATIONS For high power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO C

2SB1375(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features High Power Dissipation: PC=25W(TC=25) Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) Collector metal(Fin)is Coverd with Mold Regin Complementary to 2SD2012 MAXIMUM RATINGS (TA=25 unless otherwise noted ) Dimensions in inches and (millimeters)Symbol Parameter

isc Silicon PNP Power Transistor 2SB1372DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -140V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD2065Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon PNP Power Transistor 2SB1375DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BComplement to Type 2SD2012Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATI

isc Silicon PNP Power Transistor 2SB1371DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD2064Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon PNP Power Transistor 2SB1373DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD2066Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV