2SB1400 Datasheet. Equivalente

 ..1. Size:35K  hitachi
 2sb1400.pdf

2SB1400 Silicon PNP Epitaxial Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 1 2 1 k 400 3 (Typ) (Typ) 3 2SB1400 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Collector current IC

 ..2. Size:211K  inchange semiconductor
 2sb1400.pdf

isc Silicon PNP Darlington Power Transistor 2SB1400 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -120V(Min) CEO(SUS) High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -3A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25

 8.1. Size:70K  sanyo
 2sb1406.pdf

Ordering number EN3470 PNP Epitaxial Planar Silicon Darlington Transistor 2SB1406 Driver Applications Applications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motor unit mm drivers. 2064 [2SB1406] Features Darlington connection. High DC current gain. Large current capacity. E Emitter C Collector B Base SANYO NMP Specifications Absol

 8.2. Size:73K  sanyo
 2sb1405.pdf

Ordering number EN3236 PNP Epitaxial Planar Silicon Transistor 2SB1405 General Driver Applications Features Package Dimensions Darlington connection. unit mm High DC current gain. 2064 Large current capacity, wide ASO. [2SB1405] E Emitter C Collector B Base SANYO NMP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Un

 8.3. Size:46K  hitachi
 2sb1409.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.4. Size:42K  hitachi
 2sb1407.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.5. Size:29K  hitachi
 2sb1401.pdf

2SB1401 Silicon PNP Triple Diffused ADE-208-875 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 1 2 55 k 3 (Typ) 3 2SB1401 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VE

 8.6. Size:875K  kexin
 2sb1407s.pdf

SMD Type Transistors PNP Transistors 2SB1407S TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 Low frequency power amplifier Complementary to 2SD2121 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto

 8.7. Size:214K  inchange semiconductor
 2sb1404.pdf

isc Silicon PNP Darlington Power Transistor 2SB1404 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -1.5A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25

 8.8. Size:214K  inchange semiconductor
 2sb1402.pdf

isc Silicon PNP Darlington Power Transistor 2SB1402 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -1.5A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25

 8.9. Size:211K  inchange semiconductor
 2sb1403.pdf

isc Silicon PNP Darlington Power Transistor 2SB1403 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -120V(Min) CEO(SUS) High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -3A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25