2SB1431 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silic\on PNP Darlington Power Transistor 2SB1431DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -3A)FE CE CLow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -3A, I = -3mA)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

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DATA SHEETSILICON POWER TRANSISTOR2SB1430PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SB1430 is a Darlington power transistor that can directly PACKAGE DRAWING (UNIT: mm)drive from the IC output. This transistor is ideal for motor driversand solenoid drivers in such as OA and FA equipment.In addition, this

DATA SHEETSILICON POWER TRANSISTOR2SB1432PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SB1432 is a Darlington power transistor that can be directly ORDERING INFORMATIONdriven from the output of an IC. This transistor is ideal for OA and FAPart No. Packageequipment such as motor and solenoid drivers.2SB143

Transistors2SB1434Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mm6.90.1 2.50.1Complementary to 2SD21770.7 4.0 (0.8) Features Low collector-emitter saturation voltage VCE(sat)0.65 max. Allowing supply with the radial taping Absolute Maximum Ratings Ta = 25CParameter Symbol Rating UnitCollector-base voltage (Emitter ope

Power Transistors2SB1435Silicon PNP epitaxial planar typeFor low-frequency output amplificationUnit: mm7.50.2 4.50.2 Features Low collector-emitter saturation voltage VCE(sat) Large collector current IC0.650.1 0.850.10.8 C 0.8 C Allowing automatic insertion with radial taping 1.00.10.70.10.70.11.150.2 Absolute Maximum Ratings Ta = 25

Transistor2SB1438Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).High collector to emitter voltage VCEO.0.65 max.Allowing supply with the radial taping.+0.1 0.450.05Absolute Maximum Ratings (Ta=25C)2.5 0.5 2.5 0.5

Transistor2SB1434Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SD21772.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.0.65 max.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Sym

Transistors2SB1438Silicon PNP epitaxial planar typeFor low-frequency power amplification Unit: mm6.90.1 2.50.10.7 4.0 (0.8) Features Low collector-emitter saturation voltage VCE(sat) Large collector-emitter voltage (Base open) VCEO0.65 max. Allowing supply with the radial taping Absolute Maximum Ratings Ta = 25CParameter Symbol Rating UnitCollector

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1436 DESCRIPTION With TO-126 package Complement to type 2SD2166 Low collector saturation voltage APPLICATIONS For audio power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CO

isc Silicon PNP Darlington Power Transistor 2SB1430DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -2A)FE CE CLow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -2A, I = -2mA)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSD

isc Silicon PNP Power Transistors 2SB1436DESCRIPTIONLow Collector Saturation VoltageHigh Power Dissipation-: P = 5W(Max)@T =25C CComplement to Type 2SD2166Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in output stage of audio amplifier,voltage regulator, DC-DC converter and relay driver.ABSOLUTE