2SB1431 - описание и поиск аналогов

isc Silic on PNP Darlington Power Transistor 2SB1431 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -3A) FE CE C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -3A, I = -3mA) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

/ e c d cle stage. n e a u n n i e t t n n i o a c maintenance type s planed maintenance type M i discontinued type planed discontinued typed D Maintenance/Discontinued includes following four Product lifecy http //www.semicon.panasonic.co.jp/en/ Please visit following URL about latest information. / e c d cle stage. n e a u n n i e t t n n i o

DATA SHEET SILICON POWER TRANSISTOR 2SB1430 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1430 is a Darlington power transistor that can directly PACKAGE DRAWING (UNIT mm) drive from the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, this

DATA SHEET SILICON POWER TRANSISTOR 2SB1432 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1432 is a Darlington power transistor that can be directly ORDERING INFORMATION driven from the output of an IC. This transistor is ideal for OA and FA Part No. Package equipment such as motor and solenoid drivers. 2SB143

Transistors 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm 6.9 0.1 2.5 0.1 Complementary to 2SD2177 0.7 4.0 (0.8) Features Low collector-emitter saturation voltage VCE(sat) 0.65 max. Allowing supply with the radial taping Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Collector-base voltage (Emitter ope

Transistor 2SB1438 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25 C) 2.5 0.5 2.5 0.5

Transistor 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SD2177 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Sym

Transistors 2SB1438 Silicon PNP epitaxial planar type For low-frequency power amplification Unit mm 6.9 0.1 2.5 0.1 0.7 4.0 (0.8) Features Low collector-emitter saturation voltage VCE(sat) Large collector-emitter voltage (Base open) VCEO 0.65 max. Allowing supply with the radial taping Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Collector

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1436 DESCRIPTION With TO-126 package Complement to type 2SD2166 Low collector saturation voltage APPLICATIONS For audio power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CO

isc Silicon PNP Darlington Power Transistor 2SB1430 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -2A) FE CE C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -2A, I = -2mA) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS D

isc Silicon PNP Power Transistors 2SB1436 DESCRIPTION Low Collector Saturation Voltage High Power Dissipation- P = 5W(Max)@T =25 C C Complement to Type 2SD2166 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in output stage of audio amplifier, voltage regulator, DC-DC converter and relay driver. ABSOLUTE