2SB1454 Datasheet. Equivalente

 ..1. Size:217K  inchange semiconductor
 2sb1454.pdf

isc Silicon PNP Power Transistor 2SB1454 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.5V(Max)@ (I = -3A, I = -0.3A) CE(sat) C B Complement to Type 2SD2202 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-current switching applications. AB

 8.1. Size:191K  toshiba
 2sb1457.pdf

 8.2. Size:130K  nec
 2sb1453.pdf

DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING (UNIT mm) the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density

 8.3. Size:217K  jmnic
 2sb1455.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1455 DESCRIPTION With TO-220F package Complement to type 2SD2203 Low collector saturation voltage Large current capacity APPLICATIONS High current power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Base Absolute maximum ratings

 8.4. Size:217K  inchange semiconductor
 2sb1455.pdf

isc Silicon PNP Power Transistor 2SB1455 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.5V(Max)@ (I = -4A, I = -0.4A) CE(sat) C B Complement to Type 2SD2203 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-current switching applications. AB