2SB148 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB148
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 80 V
Tensión emisor-base (Veb): 25 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 75 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.12 MHz
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TO53
Búsqueda de reemplazo de transistor bipolar 2SB148
2SB148 Datasheet (PDF)
2sb1488.pdf
Transistor2SB1488Silicon PNP triple diffusion planer typeUnit: mmFor power switching 2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8Features 0.65 max.High foward current transfer ratio hFE.High-speed switching.High collector to base voltage VCBO.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C) 1 2 3
2sb1488 e.pdf
Transistor2SB1488Silicon PNP triple diffusion planer typeUnit: mmFor power switching 2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8Features 0.65 max.High foward current transfer ratio hFE.High-speed switching.High collector to base voltage VCBO.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C) 1 2 3
2sb1481.pdf
isc Silicon PNP Darlington Power Transistor 2SB1481DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -1.5A)FE CE CLow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -3A)CE(sat) CComplement to Type 2SD2241Minimum Lot-to-Lot variations for robust deviceperformance and reliable operatio
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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