2SB148 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB148
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Emitter-Base Voltage |Veb|: 25 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 75 °C
Transition Frequency (ft): 0.12 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO53
2SB148 Transistor Equivalent Substitute - Cross-Reference Search
2SB148 Datasheet (PDF)
2sb1488.pdf
Transistor2SB1488Silicon PNP triple diffusion planer typeUnit: mmFor power switching 2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8Features 0.65 max.High foward current transfer ratio hFE.High-speed switching.High collector to base voltage VCBO.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C) 1 2 3
2sb1488 e.pdf
Transistor2SB1488Silicon PNP triple diffusion planer typeUnit: mmFor power switching 2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8Features 0.65 max.High foward current transfer ratio hFE.High-speed switching.High collector to base voltage VCBO.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C) 1 2 3
2sb1481.pdf
isc Silicon PNP Darlington Power Transistor 2SB1481DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -1.5A)FE CE CLow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -3A)CE(sat) CComplement to Type 2SD2241Minimum Lot-to-Lot variations for robust deviceperformance and reliable operatio
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
