2SB148 Specs and Replacement
Type Designator: 2SB148
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Emitter-Base Voltage |Veb|: 25 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Transition Frequency (ft): 0.12 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Package: TO53
2SB148 Substitution
- BJT ⓘ Cross-Reference Search
2SB148 datasheet
Transistor 2SB1488 Silicon PNP triple diffusion planer type Unit mm For power switching 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features 0.65 max. High foward current transfer ratio hFE. High-speed switching. High collector to base voltage VCBO. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C) 1 2 3 ... See More ⇒
Transistor 2SB1488 Silicon PNP triple diffusion planer type Unit mm For power switching 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features 0.65 max. High foward current transfer ratio hFE. High-speed switching. High collector to base voltage VCBO. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C) 1 2 3 ... See More ⇒
isc Silicon PNP Darlington Power Transistor 2SB1481 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -1.5A) FE CE C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -3A) CE(sat) C Complement to Type 2SD2241 Minimum Lot-to-Lot variations for robust device performance and reliable operatio... See More ⇒
Detailed specifications: 2SB1457, 2SB146, 2SB1462, 2SB1463, 2SB1464, 2SB1466, 2SB147, 2SB1473, 2SD669, 2SB1481, 2SB1488, 2SB1489, 2SB149, 2SB1490, 2SB1494, 2SB1495, 2SB149N
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