2SB1489 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1489
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5 W
Tensión colector-base (Vcb): 400 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 145 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 10 MHz
Ganancia de corriente contínua (hFE): 160
Encapsulados: TO126
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2SB1489 datasheet
2sb1488.pdf
Transistor 2SB1488 Silicon PNP triple diffusion planer type Unit mm For power switching 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features 0.65 max. High foward current transfer ratio hFE. High-speed switching. High collector to base voltage VCBO. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C) 1 2 3
2sb1488 e.pdf
Transistor 2SB1488 Silicon PNP triple diffusion planer type Unit mm For power switching 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features 0.65 max. High foward current transfer ratio hFE. High-speed switching. High collector to base voltage VCBO. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C) 1 2 3
2sb1481.pdf
isc Silicon PNP Darlington Power Transistor 2SB1481 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -1.5A) FE CE C Low Collector Saturation Voltage- V = -1.5V(Max)@ (I = -3A) CE(sat) C Complement to Type 2SD2241 Minimum Lot-to-Lot variations for robust device performance and reliable operatio
Otros transistores... 2SB1463 , 2SB1464 , 2SB1466 , 2SB147 , 2SB1473 , 2SB148 , 2SB1481 , 2SB1488 , TIP142 , 2SB149 , 2SB1490 , 2SB1494 , 2SB1495 , 2SB149N , 2SB15 , 2SB150 , 2SB151 .
History: DTA115EM
History: DTA115EM
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