2SB1489
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB1489
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.5
W
Maximum Collector-Base Voltage |Vcb|: 400
V
Maximum Collector-Emitter Voltage |Vce|: 400
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 0.6
A
Max. Operating Junction Temperature (Tj): 145
°C
Transition Frequency (ft): 10
MHz
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package:
TO126
2SB1489
Transistor Equivalent Substitute - Cross-Reference Search
2SB1489
Datasheet (PDF)
8.2. Size:41K panasonic
2sb1488.pdf 
Transistor2SB1488Silicon PNP triple diffusion planer typeUnit: mmFor power switching 2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8Features 0.65 max.High foward current transfer ratio hFE.High-speed switching.High collector to base voltage VCBO.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C) 1 2 3
8.3. Size:46K panasonic
2sb1488 e.pdf
Transistor2SB1488Silicon PNP triple diffusion planer typeUnit: mmFor power switching 2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8Features 0.65 max.High foward current transfer ratio hFE.High-speed switching.High collector to base voltage VCBO.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C) 1 2 3
8.4. Size:211K inchange semiconductor
2sb1481.pdf
isc Silicon PNP Darlington Power Transistor 2SB1481DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -1.5A)FE CE CLow Collector Saturation Voltage-: V = -1.5V(Max)@ (I = -3A)CE(sat) CComplement to Type 2SD2241Minimum Lot-to-Lot variations for robust deviceperformance and reliable operatio
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