2SB149N Todos los transistores

 8.1. Size:179K  toshiba
 2sb1495.pdf

 8.2. Size:68K  panasonic
 2sb1493.pdf

Power Transistors 2SB1493 Silicon PNP epitaxial planar type Darlington For power amplification Unit mm Complementary to 2SD2255 15.0 0.5 4.5 0.2 13.0 0.5 10.5 0.5 2.0 0.1 Features Optimum for 60W HiFi output High foward current transfer ratio hFE 5000 to 30000 3.2 0.1 Low collector to emitter saturation voltage VCE(sat)

 8.3. Size:95K  panasonic
 2sb1490.pdf

Power Transistors 2SB1490 Silicon PNP epitaxial planar type darlington Unit mm 20.0 0.5 5.0 0.3 For power amplification (3.0) Complementary to 2SD2250 3.3 0.2 Features Optimum for 80 W HiFi output (1.5) High forward current transfer ratio hFE (1.5) Low collector-emitter saturation voltage VCE(sat) 2.0 0.3 2.7 0.3 3.0 0.3 1.0 0.2 0.6 0.2 Absolute

 8.4. Size:57K  panasonic
 2sb1492 2sd2254 2sd2254.pdf

Power Transistors 2SD2254 Silicon NPN triple diffusion planar type Darlington For power amplification Unit mm 3.3 0.2 Complementary to 2SB1492 20.0 0.5 5.0 0.3 3.0 Features Optimum for 60W HiFi output High foward current transfer ratio hFE 5000 to 30000 Low collector to emitter saturation voltage VCE(sat)

 8.5. Size:35K  hitachi
 2sb1494.pdf

2SB1494 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary Pair with 2SD2256 Outline TO-3P 2 1 1. Base ID 2. Collector (Flange) 3. Emitter 1 3 2 3 2SB1494 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Col

 8.6. Size:222K  inchange semiconductor
 2sb1492.pdf

isc Silicon PNP Darlington Power Transistor 2SB1492 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -5A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -5A CE(sat) C Complement to Type 2SD2254 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. Optimum for 60W HiFi

 8.7. Size:221K  inchange semiconductor
 2sb1490.pdf

isc Silicon PNP Darlington Power Transistor 2SB1490 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -6A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -6A CE(sat) C Complement to Type 2SD2250 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications Optimum for 80W HiFi o

 8.8. Size:231K  inchange semiconductor
 2sb1495.pdf

isc Silicon PNP Darlington Power Transistor 2SB1495 DESCRIPTION High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -2A) FE CE C Low-Collector Saturation Voltage- V = -1.5V(Max.)@I = -1.5A CE(sat) C Complement to Type 2SD2257 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power switching applications. A