2SB149N
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SB149N
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 25
W
Maximum Collector-Base Voltage |Vcb|: 60
V
Maximum Emitter-Base Voltage |Veb|: 30
V
Maximum Collector Current |Ic max|: 7
A
Max. Operating Junction Temperature (Tj): 75
°C
Transition Frequency (ft): 0.1
MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package:
TO3
2SB149N
Transistor Equivalent Substitute - Cross-Reference Search
2SB149N
Datasheet (PDF)
8.2. Size:68K panasonic
2sb1493.pdf 
Power Transistors2SB1493Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SD225515.0 0.5 4.5 0.213.0 0.510.5 0.5 2.0 0.1FeaturesOptimum for 60W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000 3.2 0.1Low collector to emitter saturation voltage VCE(sat):
8.3. Size:95K panasonic
2sb1490.pdf
Power Transistors2SB1490Silicon PNP epitaxial planar type darlingtonUnit: mm20.00.5 5.00.3For power amplification(3.0)Complementary to 2SD2250 3.30.2 Features Optimum for 80 W HiFi output(1.5) High forward current transfer ratio hFE(1.5) Low collector-emitter saturation voltage VCE(sat) 2.00.32.70.33.00.31.00.20.60.2 Absolute
8.4. Size:57K panasonic
2sb1492 2sd2254 2sd2254.pdf
Power Transistors2SD2254Silicon NPN triple diffusion planar type DarlingtonFor power amplificationUnit: mm 3.3 0.2Complementary to 2SB149220.0 0.5 5.0 0.33.0FeaturesOptimum for 60W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat):
8.5. Size:35K hitachi
2sb1494.pdf
2SB1494Silicon PNP Triple DiffusedApplicationLow frequency power amplifier complementary Pair with 2SD2256OutlineTO-3P211. BaseID2. Collector(Flange)3. Emitter13232SB1494Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7 VCol
8.6. Size:222K inchange semiconductor
2sb1492.pdf
isc Silicon PNP Darlington Power Transistor 2SB1492DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -5AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -5ACE(sat) CComplement to Type 2SD2254Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Optimum for 60W HiFi
8.7. Size:221K inchange semiconductor
2sb1490.pdf
isc Silicon PNP Darlington Power Transistor 2SB1490DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -6AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -6ACE(sat) CComplement to Type 2SD2250Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsOptimum for 80W HiFi o
8.8. Size:231K inchange semiconductor
2sb1495.pdf
isc Silicon PNP Darlington Power Transistor 2SB1495DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -2A)FE CE CLow-Collector Saturation Voltage-: V = -1.5V(Max.)@I = -1.5ACE(sat) CComplement to Type 2SD2257Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power switching applications.A
Datasheet: 2SA1179M4
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, 2SA1179M7
, 2SA118
, 2SA1180
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, BD777
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, 2SA1183
, 2SA1184
, 2SA1185
, 2SA1186
, 2SA1186O
, 2SA1186P
, 2SA1186Y
.
