2SB1530 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

isc Silicon PNP Power Transistor 2SB1530DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOComplement to Type 2SD2337Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier color TVvertical deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

Transistor2SB1537Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD23571.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Large collector power dissipation PC.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zin

Transistor2SB1539Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD23591.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Large collector power dissipation PC.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zin

Power Transistors2SB1531Silicon PNP epitaxial planar type DarlingtonFor power amplificationUnit: mmComplementary to 2SD234015.0 0.5 4.5 0.213.0 0.510.5 0.5 2.0 0.1FeaturesOptimum for 40W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000 3.2 0.1Low collector to emitter saturation voltage VCE(sat):

Transistor2SB1537Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD23571.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Large collector power dissipation PC.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zin

Transistor2SB1539Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD23591.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Large collector power dissipation PC.45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zin

SMD Type TransistorsPNP Transistors2SB15391.70 0.1 Features Low collector to emitter saturation voltage Large collector power dissipation PC. Complementary to 2SD23590.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -20 V

SMD Type TransistorsPNP Transistors2SB15371.70 0.1 Features Low collector to emitter saturation voltage Large collector power dissipation PC. Complementary to 2SD23570.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -10 Collector - Emitter Voltage VCEO -10 V

isc Silicon PNP Darlington Power Transistor 2SB1531DESCRIPTIONHigh DC Current Gain-: h = 5000(Min)@I = -5AFE CLow-Collector Saturation Voltage-: V = -2.5V(Max.)@I = -5ACE(sat) CComplement to Type 2SD2340Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS