2SB1530 - описание и поиск аналогов

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

isc Silicon PNP Power Transistor 2SB1530 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Complement to Type 2SD2337 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier color TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

Transistor 2SB1537 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD2357 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zin

Transistor 2SB1539 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD2359 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zin

Power Transistors 2SB1531 Silicon PNP epitaxial planar type Darlington For power amplification Unit mm Complementary to 2SD2340 15.0 0.5 4.5 0.2 13.0 0.5 10.5 0.5 2.0 0.1 Features Optimum for 40W HiFi output High foward current transfer ratio hFE 5000 to 30000 3.2 0.1 Low collector to emitter saturation voltage VCE(sat)

Transistor 2SB1537 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD2357 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zin

Transistor 2SB1539 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD2359 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large collector power dissipation PC. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zin

SMD Type Transistors PNP Transistors 2SB1539 1.70 0.1 Features Low collector to emitter saturation voltage Large collector power dissipation PC. Complementary to 2SD2359 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -20 Collector - Emitter Voltage VCEO -20 V

SMD Type Transistors PNP Transistors 2SB1537 1.70 0.1 Features Low collector to emitter saturation voltage Large collector power dissipation PC. Complementary to 2SD2357 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -10 Collector - Emitter Voltage VCEO -10 V

isc Silicon PNP Darlington Power Transistor 2SB1531 DESCRIPTION High DC Current Gain- h = 5000(Min)@I = -5A FE C Low-Collector Saturation Voltage- V = -2.5V(Max.)@I = -5A CE(sat) C Complement to Type 2SD2340 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS