2SB154 Todos los transistores

 0.1. Size:45K  panasonic
 2sb1548.pdf

Power Transistors 2SB1548, 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374 and 2SD2374A Unit mm Features High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) 4.6 0.2 Full-pack package which can be installed to the heat sink with 9.9 0.3 2.9 0.2 one screw Abs

 0.2. Size:187K  jmnic
 2sb1548a.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1548 2SB1548A DESCRIPTION With TO-220F package Complement to type 2SD2374/2374A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-2

 0.3. Size:187K  jmnic
 2sb1548.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SB1548 2SB1548A DESCRIPTION With TO-220F package Complement to type 2SD2374/2374A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-2

 0.4. Size:237K  inchange semiconductor
 2sb1548a.pdf

isc Silicon PNP Power Transistor 2SB1548A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage Complement to Type 2SD2374A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifications. ABSOLUTE

 0.5. Size:146K  inchange semiconductor
 2sb1548 2sb1548a.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1548 2SB1548A DESCRIPTION With TO-220F package Complement to type 2SD2374/2374A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplif

 0.6. Size:214K  inchange semiconductor
 2sb1548.pdf

isc Silicon PNP Power Transistor 2SB1548 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage Complement to Type 2SD2374 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifications. ABSOLUTE MA