Биполярный транзистор 2SB154
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB154
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.15
W
Макcимально допустимое напряжение коллектор-база (Ucb): 12
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2
V
Макcимальный постоянный ток коллектора (Ic): 0.07
A
Предельная температура PN-перехода (Tj): 85
°C
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора:
TO1
Аналоги (замена) для 2SB154
2SB154
Datasheet (PDF)
0.1. Size:45K panasonic
2sb1548.pdf 
Power Transistors2SB1548, 2SB1548ASilicon PNP epitaxial planar typeFor power amplificationComplementary to 2SD2374 and 2SD2374AUnit: mmFeaturesHigh forward current transfer ratio hFE which has satisfactory linearityLow collector to emitter saturation voltage VCE(sat)4.6 0.2 Full-pack package which can be installed to the heat sink with9.9 0.32.9 0.2one screwAbs
0.2. Size:187K jmnic
2sb1548a.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB1548 2SB1548A DESCRIPTION With TO-220F package Complement to type 2SD2374/2374A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-2
0.3. Size:187K jmnic
2sb1548.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB1548 2SB1548A DESCRIPTION With TO-220F package Complement to type 2SD2374/2374A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-2
0.4. Size:237K inchange semiconductor
2sb1548a.pdf 
isc Silicon PNP Power Transistor 2SB1548ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation VoltageComplement to Type 2SD2374AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifications.ABSOLUTE
0.5. Size:146K inchange semiconductor
2sb1548 2sb1548a.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1548 2SB1548A DESCRIPTION With TO-220F package Complement to type 2SD2374/2374A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplif
0.6. Size:214K inchange semiconductor
2sb1548.pdf 
isc Silicon PNP Power Transistor 2SB1548DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation VoltageComplement to Type 2SD2374Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifications.ABSOLUTE MA
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