Power Transistors2SB1548, 2SB1548ASilicon PNP epitaxial planar typeFor power amplificationComplementary to 2SD2374 and 2SD2374AUnit: mmFeaturesHigh forward current transfer ratio hFE which has satisfactory linearityLow collector to emitter saturation voltage VCE(sat)4.6 0.2 Full-pack package which can be installed to the heat sink with9.9 0.32.9 0.2one screwAbs

JMnic Product Specification Silicon PNP Power Transistors 2SB1548 2SB1548A DESCRIPTION With TO-220F package Complement to type 2SD2374/2374A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-2

JMnic Product Specification Silicon PNP Power Transistors 2SB1548 2SB1548A DESCRIPTION With TO-220F package Complement to type 2SD2374/2374A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-2

isc Silicon PNP Power Transistor 2SB1548ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation VoltageComplement to Type 2SD2374AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifications.ABSOLUTE

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1548 2SB1548A DESCRIPTION With TO-220F package Complement to type 2SD2374/2374A Low collector saturation voltage High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS For power amplifications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplif

isc Silicon PNP Power Transistor 2SB1548DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOCollector Power Dissipation-: P = 25 W@ T = 25C CLow Collector Saturation VoltageComplement to Type 2SD2374Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifications.ABSOLUTE MA