2SB159 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SB1590K Transistors Power Transistor (-15V, -1A) 2SB1590K Features External dimensions (Unit : mm) 1) Low saturation voltage, VCE(sat) = -0.3V (Max.) SMT3at IC / IB = -0.4A / -20mA. 2) IC = -1A 2.9 1.10.4 0.83) Complements the 2SD2444K. (3)(2) (1) Packaging specification and hFE 0.95 0.950.15Type 2SB1590K1.9(1)EmitterSMT3Package(2)BaseEach lead has

Transistor2SB1599Silicon PNP epitaxial planer typeFor power amplificationUnit: mmComplementary to 2SD24571.5 0.14.5 0.1Features1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga- 45zine packing.0.4 0.080.4 0.040.5 0.08

Power Transistors2SB1593Silicon PNP epitaxial planar typeFor low-frequency output amplificationUnit: mm7.50.2 4.50.2 Features Low collector-emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping0.650.1 0.850.10.8 C 0.8 C1.00.10.70.1 Absolute Maximum Ratings Ta = 25C0.70.11.150.21.150.2Parameter Symbol

Transistor2SB1592Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 V+0.15 +0.150.45 0.1 0.45 0.1Collector to e

Transistor2SB1599Silicon PNP epitaxial planer typeFor power amplificationUnit: mmComplementary to 2SD24571.5 0.14.5 0.1Features1.6 0.2Low collector to emitter saturation voltage VCE(sat).Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga- 45zine packing.0.4 0.080.4 0.040.5 0.08

Transistor2SB1592Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmFeaturesLow collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 25 VEmitter to base voltage VEBO 11 VPea

SMD Type TransistorsPNP Transistors2SB1590KSOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-1A1 2 Collector Emitter Voltage VCEO=-15V+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SD2444K +0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

SMD Type TransistorsPNP Transistors2SB15991.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). Complementary to 2SD24570.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5