2SB159 Specs and Replacement
Type Designator: 2SB159
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.06 W
Maximum Collector-Base Voltage |Vcb|: 7 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.005 A
Max. Operating Junction Temperature (Tj): 65 °C
Electrical Characteristics
Transition Frequency (ft): 0.4 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: R19
- BJT ⓘ Cross-Reference Search
2SB159 datasheet
0.2. Size:69K rohm
2sb1590k.pdf 

2SB1590K Transistors Power Transistor (-15V, -1A) 2SB1590K Features External dimensions (Unit mm) 1) Low saturation voltage, VCE(sat) = -0.3V (Max.) SMT3 at IC / IB = -0.4A / -20mA. 2) IC = -1A 2.9 1.1 0.4 0.8 3) Complements the 2SD2444K. (3) (2) (1) Packaging specification and hFE 0.95 0.95 0.15 Type 2SB1590K 1.9 (1)Emitter SMT3 Package (2)Base Each lead has... See More ⇒
0.3. Size:39K panasonic
2sb1599.pdf 

Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Unit mm Complementary to 2SD2457 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45 zine packing. 0.4 0.08 0.4 0.04 0.5 0.08 ... See More ⇒
0.4. Size:75K panasonic
2sb1593.pdf 

Power Transistors 2SB1593 Silicon PNP epitaxial planar type For low-frequency output amplification Unit mm 7.5 0.2 4.5 0.2 Features Low collector-emitter saturation voltage VCE(sat) Allowing automatic insertion with radial taping 0.65 0.1 0.85 0.1 0.8 C 0.8 C 1.0 0.1 0.7 0.1 Absolute Maximum Ratings Ta = 25 C 0.7 0.1 1.15 0.2 1.15 0.2 Parameter Symbol... See More ⇒
0.5. Size:38K panasonic
2sb1592 e.pdf 

Transistor 2SB1592 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V +0.15 +0.15 0.45 0.1 0.45 0.1 Collector to e... See More ⇒
0.6. Size:43K panasonic
2sb1599 e.pdf 

Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Unit mm Complementary to 2SD2457 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45 zine packing. 0.4 0.08 0.4 0.04 0.5 0.08 ... See More ⇒
0.7. Size:55K panasonic
2sb1592.pdf 

Transistor 2SB1592 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 11 V Pea... See More ⇒
0.8. Size:990K kexin
2sb1590k.pdf 

SMD Type Transistors PNP Transistors 2SB1590K SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-1A 1 2 Collector Emitter Voltage VCEO=-15V +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SD2444K +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto... See More ⇒
0.9. Size:932K kexin
2sb1599.pdf 

SMD Type Transistors PNP Transistors 2SB1599 1.70 0.1 Features Low collector to emitter saturation voltage VCE(sat). Complementary to 2SD2457 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 ... See More ⇒
Detailed specifications: 2SB1560, 2SB1562, 2SB156A, 2SB157, 2SB1570, 2SB158, 2SB1587, 2SB1588, TIP42C, 2SB16, 2SB160, 2SB161, 2SB162, 2SB1624, 2SB1625, 2SB1626, 2SB163
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